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參數(shù)資料
| 型號(hào)： | HYB511000BJ-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| 中文描述： | 1M X 1 FAST PAGE DRAM, 70 ns, PDSO20 |
| 文件頁(yè)數(shù)： | 6/22頁(yè) |
| 文件大?。?/td> | 192K |
| 代理商： | HYB511000BJ-70 |
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Semiconductor Group
38
HYB 511000BJ/BJL-50/-60/-70
1 M
×
1-DRAM
Average
V
CC
supply current during RAS only
refresh cycles:
-50 version
-60 version
-70 version
(RAS cycling: CAS =
V
IH
:
t
RC
=
t
RC
min.)
Average
V
CC
supply current during fast page
modes:
I
CC3
–
–
–
90
80
70
mA
mA
mA
2)
2)
2)
-50 version
-60 version
-70 version
(RAS =
V
IL
, CAS, address cycling:
t
PC
=
t
PC
min.)
Standby
V
CC
supply current
I
CC4
–
–
–
70
60
50
mA
mA
mA
2) 3)
2) 3)
2) 3)
L-Version
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current during
CAS-before-RAS refresh mode:
I
CC5
–
–
1
200
mA
μ
A
1)
1)
-50 version
-60 version
-70 version
(RAS, CAS, address cycling:
t
RC
=
t
RC
min.)
For L-version only:
Battery backup current:
average power supply current, battery backup
mode:
(CAS = CAS before RAS cycling or 0.2 V,
WE =
V
CC
– 0.2 V or 0.2 V,
A0 to A9 =
V
CC
– 0.2 V or 0.2 V,
DI =
V
CC
– 0.2 V or 0.2 V open,
t
RC
= 125
μ
s,
t
RAS
=
t
RAS
min. ~ 1
μ
s)
Input leakage current (only TF)
(0 V
≤
V
IN
(TF)
≤
V
CC
+ 0.5 V)
All other pins not under test = 0 V
I
CC6
–
–
–
90
80
70
mA
mA
mA
2)
2)
2)
I
CC7
–
300
μ
A
2)
I
ITF(L)
– 10
+ 10
μ
A
1)
Test function input current
(
V
+ 4.5
≤
V
IN
(TF)
≤
10.5 V)
I
TF
–
1
mA
1)
DC Characteristics
(cont’d)
T
A
= 0 to 70 C;
V
SS
= 0 V;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB511000BJL-50 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-60 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJ- | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-70 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB5116400BJ-50 | 4M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB511000BJ-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
| HYB511000BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BL-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
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