- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370792 > HYB39S256400D (INFINEON TECHNOLOGIES AG) 256-MBit Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB39S256400D |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 256-MBit Synchronous DRAM |
| 中文描述： | 256兆位同步DRAM |
| 文件頁(yè)數(shù)： | 20/28頁(yè) |
| 文件大?。?/td> | 630K |
| 代理商： | HYB39S256400D |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)當(dāng)前第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)
V
DD
V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
Electrical Characteristics
Data Sheet
20
Rev. 1.02, 2004-02
10072003-13LE-FGQQ
4
Electrical Characteristics
4.1
Operating Conditions
Attention: Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.Functional
operation should be restricted to recommended operation conditions. Exposure to higher than
recommended voltage for extended periods of time affect device reliability
Table 10
Parameter
Absolute Maximum Ratings
Symbol
Limit Values
min.
– 1.0
– 1.0
– 1.0
0
-55
–
–
Unit
Note/
Test Condition
max.
+4.6
+4.6
+4.6
+70
+150
1
50
Input / Output voltage relative to
V
SS
Voltage on
V
DD
supply relative to
V
SS
Voltage on
V
DDQ
supply relative to
V
SS
Operating Temperature
Storage temperature range
Power dissipation per SDRAM component
Data out current (short circuit)
V
IN,
V
OUT
V
DD
V
DDQ
T
A
T
STG
P
D
I
OUT
V
V
V
ο
C
o
C
W
mA
–
–
–
–
–
–
–
Table 11
Parameter
DC Characteristics
1)
1)
T
A
= 0 to 70
ο
C
2) All voltages are referenced to
V
SS
3)
V
IH
may overshoot to
V
DDQ
+ 2.0 V for pulse width of < 4ns with 3.3V.
V
IL
may undershoot to -2.0 V for pulse width < 4.0 ns
with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference
.
Symbol
Values
Unit
Note/
Test Condition
min.
3.0
3.0
2.0
– 0.3
2.4
–
– 5
max.
3.6
3.6
V
DDQ
+0.3
+0.8
–
0.4
+5
Supply Voltage
I/O Supply Voltage
Input high voltage
Input low voltage
Output high voltage
(
I
OUT
= – 4.0 mA)
Output low voltage (
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V <
V
IN
<
V
DD
, all other inputs = 0 V)
Output leakage current
(DQs are disabled, 0 V <
V
OUT
<
V
DDQ
)
V
V
V
V
V
V
mA
2)
2)
2)3)
2)3)
2)
2)
–
I
OL
– 5
+5
mA
–
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB39S256400DTL-6 | 256-MBit Synchronous DRAM |
| HYB39S256400DTL-7 | surface mount silicon Zener diodes |
| HYB39S256400DTL-75 | 256-MBit Synchronous DRAM |
| HYB39S256400DTL-8 | 256-MBit Synchronous DRAM |
| HYB39S512400AT | 512-Mbit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S256400DC-6 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
| HYB39S256400DC-7 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
| HYB39S256400DC-7.5 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:?256Mb (64Mx4) FBGA PC133 3-3-3? |
| HYB39S256400DC-75 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
| HYB39S256400DC-8 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。