參數(shù)資料
型號: HYB39S256400D
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-MBit Synchronous DRAM
中文描述: 256兆位同步DRAM
文件頁數(shù): 14/28頁
文件大?。?/td> 630K
代理商: HYB39S256400D
X
H
L
H
HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
Functional Description
Data Sheet
14
Rev. 1.02, 2004-02
10072003-13LE-FGQQ
3
Functional Description
3.1
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at the positive
edge of the clock. The following list shows the truth table for the operation commands.
Table 7
Operation
Truth Table: Operation Command
Device State
CKE
n-1
1)2)
H
H
H
H
H
1) V = Valid, x = Don’t Care, L = Low Level, H = High Level
2) CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock before the commands are
provided.
3) This is the state of the banks designated by BA0, BA1 signals.
4) Power Down Mode can not be entered in a burst cycle. When this command asserted in the burst mode cycle device is in
clock suspend mode.
CKE
n
1)2)
X
X
X
X
X
DQM
1)2)
BA0
BA1
1)2)
V
V
X
V
V
AP=
A10
1)2)
V
L
H
L
H
Addr.
1)2)
CS
1)2)
RAS
1)2)
CAS
1)2)
WE
1)2)
Bank Active
Bank Precharge
Precharge All
Write
Write with
Autoprecharge
Read
Read with
Autoprecharge
Mode Register Set
No Operation
Burst Stop
Device Deselect
Auto Refresh
Self Refresh Entry
Self Refresh Exit
Idle
3)
Any
Any
Active
3)
Active
3)
X
X
X
X
X
V
X
X
V
V
L
L
L
L
L
L
L
L
H
H
H
H
H
L
L
H
L
L
L
L
Active
3)
Active
3)
H
H
X
X
X
X
V
V
L
H
V
V
L
L
H
H
L
L
H
H
Idle
Any
Active
Any
Idle
Idle
Idle (Self Refr.) L
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
V
X
X
X
X
X
X
V
X
X
X
X
X
X
V
X
X
X
X
X
X
L
L
L
H
L
L
H
L
X
H
L
H
H
X
L
L
X
H
X
X
L
H
H
X
L
L
X
H
X
X
L
H
L
X
H
H
X
X
X
X
Clock Suspend Entry Active
Power Down Entry
(Precharge or active
standby)
H
H
L
L
X
X
X
X
X
X
X
X
Idle
Active
Active
4)
Any (Power
Down)
L
X
H
L
X
H
X
X
H
X
H
X
X
H
X
H
X
X
L
X
Clock Suspend Exit
Power Down Exit
L
L
H
H
X
X
X
X
X
X
X
X
Data Write/Output
Enable
Data Write/Output
Disable
Active
H
X
L
X
X
X
Active
H
X
H
X
X
X
X
X
X
X
相關(guān)PDF資料
PDF描述
HYB39S256400DTL-6 256-MBit Synchronous DRAM
HYB39S256400DTL-7 surface mount silicon Zener diodes
HYB39S256400DTL-75 256-MBit Synchronous DRAM
HYB39S256400DTL-8 256-MBit Synchronous DRAM
HYB39S512400AT 512-Mbit Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB39S256400DC-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM
HYB39S256400DC-7 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM
HYB39S256400DC-7.5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?256Mb (64Mx4) FBGA PC133 3-3-3?
HYB39S256400DC-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM
HYB39S256400DC-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM