參數(shù)資料
型號(hào)： HYB25D512160AT-6
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512Mbit Double Data Rate SDRAM
中文描述： 512MB的雙倍數(shù)據(jù)速率SDRAM
文件頁(yè)數(shù)： 63/90頁(yè)
文件大?。?/td> 3191K
代理商： HYB25D512160AT-6
Data Sheet
63
Rev. 1.2, 2004-06
HYB25D512[40/16/80]0B[E/F/C/T]
512Mbit Double Data Rate SDRAM
Normal Strength Pull-down and Pull-up Characteristics
5
Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pull-down
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the
V
-
I
curve.
2. The full variation in driver pull-down current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V
-
I
curve.
3. The nominal pull-up
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V
-
I
curve.
4. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V
-
I
curve.
5. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pull-up to pull-down current should be unity
±
10%, for device drain
to source voltages from 0.1 to 1.0 V.
Figure 34
Normal Strength Pull-down Characteristics
Figure 35
Normal Strength Pull-up Characteristics
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
120
140
I
O
V
DDQ
-
V
OUT
(V)
Maximum
Nominal High
Nominal Low
Minimum
Maximum
Nominal High
Nominal Low
Minimum
V
DDQ
-
V
OUT
(V)
0.5
1
1.5
2
2.5
0
0
-20
-40
-60
-80
-100
-120
-140
-160
I
O
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參數(shù)描述
HYB25D512400BR-7 制造商:Infineon Technologies AG 功能描述:128M X 4 DDR DRAM MODULE, P66 Pin Plastic SMT
HYB25D512400CE-5 制造商:Infineon Technologies AG 功能描述:
HYB25D512800CE-5 功能描述:IC DDR SDRAM 512MBIT 66TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF)
HYB25D512800CE-6 功能描述:IC DDR SDRAM 512MBIT 66TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF)
HYB25DC512160CE-5 制造商:Infineon Technologies AG 功能描述: 制造商:QIMONDA 功能描述:
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