參數(shù)資料
型號： HYB18L256160BF-75
廠商： INFINEON TECHNOLOGIES AG
英文描述： DRAMs for Mobile Applications
中文描述： 針對移動應(yīng)用的DRAM
文件頁數(shù)： 46/49頁
文件大小： 1327K
代理商： HYB18L256160BF-75
HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Electrical Characteristics
Data Sheet
46
V1.4, 2004-04-30
3.3
Operating Currents
Table 21
Parameter & Test Conditions
Maximum Operating Currents
1)
1) 0
°
C
≤
T
C
≤
70
°
C (comm.); -25
°
C
≤
T
C
≤
85
°
C (ext.);
V
DD
=
V
DDQ
= 1.8 V
±
0.15 V;
Recommended Operating Conditions unless otherwise noted
2) These values are measured with
t
CK
= 7.5 ns
3) All parameters are measured with no output loads.
Symbol
Values
- 7.5
60
Unit
Notes
Operating current:
one bank: active / read / precharge, BL = 1,
t
RC
=
t
RCmin
Precharge power-down standby current:
all banks idle, CS
≥
V
IHmin
, CKE
≤
V
ILmax
,
inputs changing once every two clock cycles
Precharge power-down standby current with clock stop:
all banks idle, CS
≥
V
IHmin
, CKE
≤
V
ILmax
, all inputs stable
Precharge non power-down standby current:
all banks idle, CS
≥
V
IHmin
, CKE
≥
V
IHmin
,
inputs changing once every two clock cycles
Precharge non power-down standby current with clock stop:
all banks idle, CS
≥
V
IHmin
, CKE
≥
V
IHmin
, all inputs stable
Active power-down standby current:
one bank active, CS
≥
V
IHmin
, CKE
≤
V
ILmax
,
inputs changing once every two clock cycles
Active power-down standby current with clock stop:
one bank active, CS
≥
V
IHmin
, CKE
≤
V
ILmax
, all inputs stable
Active non power-down standby current:
one bank active, CS
≥
V
IHmin
, CKE
≥
V
IHmin
,
inputs changing once every two clock cycles
Active non power-down standby current with clock stop:
one bank active, CS
≥
V
IHmin
, CKE
≥
V
IHmin
, all inputs stable
Operating burst read current:
all banks active; continuous burst read,
inputs changing once every two clock cycles
Auto-Refresh current:
t
RC
=
t
RCmin
, “burst refresh”,
inputs changing once every two clock cycles
Self Refresh current:
self refresh mode, CS
≥
V
IHmin
, CKE
≤
V
ILmax
, all inputs stable
Deep Power Down current
I
DD1
mA
2)3)
I
DD2P
0.5
mA
2)
I
DD2PS
0.35
mA
–
I
DD2N
13
mA
2)
I
DD2NS
1.0
mA
–
I
DD3P
1.0
mA
2)
I
DD3PS
0.5
mA
–
I
DD3N
15
mA
2)
I
DD3NS
1.5
mA
–
I
DD4
45
mA
2)3)
I
DD5
90
mA
2)
I
DD6
see
Table 22
–
I
DD7
20
μ
A
–
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