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參數(shù)資料
| 型號： | HYB18L256160BF-75 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | DRAMs for Mobile Applications |
| 中文描述： | 針對移動應(yīng)用的DRAM |
| 文件頁數(shù)： | 21/49頁 |
| 文件大?。?/td> | 1327K |
| 代理商： | HYB18L256160BF-75 |
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Data Sheet
21
V1.4, 2004-04-30
HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
2.4.5
READ
Figure 11
READ Command
Subsequent to programming the mode register with
CAS latency and burst length, READ bursts are
initiated with a READ command, as shown in
Figure 11
. Basic timings for the DQs are shown in
Figure 12
; they apply to all read operations and
therefore are omitted from all subsequent timing
diagrams.
The starting column and bank addresses are provided
with the READ command and Auto Precharge is either
enabled or disabled for that burst access. If Auto
Precharge is enabled, the row being accessed starts
precharge at the completion of the burst, provided
t
RAS
has been satisfied. For the generic READ commands
used in the following illustrations, Auto Precharge is
disabled.
Figure 12
Basic READ Timing Parameters for DQs
BA0,BA1
BA
WE
CKE
(High)
CLK
RAS
CAS
A0-A8
CA
= Don't Care
BA = Bank Address
CA = Column Address
AP = Auto Precharge
A10
AP
Disable AP
Enable AP
CS
t
LZ
t
AC
t
AC
t
HZ
CLK
= Don't Care
t
DQZ
t
OH
t
OH
DQM
DQ
DO n+1
DO n
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