參數(shù)資料
型號(hào)： HYB 25M144180C
廠商： SIEMENS AG
英文描述： 144-MBit Direct RDRAM(144 M位直接RDRAM)
中文描述： 144兆位的直接的RDRAM（144米位直接的RDRAM）
文件頁(yè)數(shù)： 6/93頁(yè)
文件大?。?/td> 919K
代理商： HYB 25M144180C
Direct RDRAM
128/144-MBit (256K
×
16/18
×
32s)
Data Book
6
2.00
General Description
Figure 2
is a block diagram of the 128/144 Mbit Direct RDRAM. It consists of two major blocks: a
“core” block built from banks and sense amps similar to those found in other types of DRAM, and a
Direct Rambus interface block which permits an external controller to access this core at up to
1.6 GB/s.
Control Registers
: The CMD, SCK, SIO0, and SIO1 pins appear in the upper center of
Figure 2
.
They are used to write and read a block of control registers. These registers supply the RDRAM
configuration information to a controller and they select the operating modes of the device. The nine
bit REFR value is used for tracking the last refreshed row. Most importantly, the five bit DEVID
specifies the device address of the RDRAM on the Channel.
Clocking
: The CTM and CTMN pins (Clock-To-Master) generate TCLK (Transmit Clock), the
internal clock used to transmit read data. The CFM and CFMN pins (Clock-From-Master) generate
RCLK (Receive Clock), the internal clock signal used to receive write data and to receive the ROW
and COL pins.
DQA, DQB Pins
: These 18 pins carry read (Q) and write (D) data across the Channel. They are
multiplexed/de-multiplexed from/to two 72-bit data paths (running at one-eighth the data frequency)
inside the RDRAM.
Banks
: The 16 Mbyte core of the RDRAM is divided into 32 0.5 Mbyte banks, each organized as
512 rows, with each row containing 64 dualocts, and each dualoct containing 16 bytes. A dualoct is
the smallest unit of data that can be addressed.
Sense Amps
: The RDRAM contains 34 sense amps. Each sense amp consists of 512 bytes of fast
storage (256 for DQA and 256 for DQB) and can hold one-half of one row of one bank of the
RDRAM. The sense amp may hold any of the 512 half-rows of an associated bank. However, each
sense amp is shared between two adjacent banks of the RDRAM (except for numbers 0, 15, 30, and
31). This introduces the restriction that adjacent banks may not be simultaneously accessed.
RQ Pins
: These pins carry control and address information. They are broken into two groups.
RQ7 … RQ5 are also called ROW2 … ROW0, and are used primarily for controlling row accesses.
RQ4 … RQ0 are also called COL4 … COL0, and are used primarily for controlling column
accesses.
ROW Pins
: The principle use of these three pins is to manage the transfer of data between the
banks and the sense amps of the RDRAM. These pins are de-multiplexed into a 24-bit ROWA
(row-activate) or ROWR (row-operation) packet.
COL Pins
: The principle use of these five pins is to manage the transfer of data between the
DQA/DQB pins and the sense amps of the RDRAM. These pins are de-multiplexed into a 23-bit
COLC (column-operation) packet and either a 17-bit COLM (mask) packet or a 17-bit COLX
(extended-operation) packet.
ACT Command
: An ACT (activate) command from an ROWA packet causes one of the 512 rows
of the selected bank to be loaded to its associated sense amps (two 256 byte sense amps for DQA
and two for DQB).
PRER Command
: A PRER (precharge) command from an ROWR packet causes the selected
bank to release its two associated sense amps, permitting a different row in that bank to be
activated, or permitting adjacent banks to be activated.
相關(guān)PDF資料
PDF描述
HYB25R144180C 144-Mbit direct RDRAM(144 Mbit 直接 RDRAM)
HYB3116160BST-70 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BST-70 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BST-60 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BST-60 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3116160BSJ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BST-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
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