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參數(shù)資料
| 型號(hào)： | HY64UD16322M |
| 英文描述： | x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M |
| 中文描述： | x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |偽靜態(tài)存儲(chǔ)器- 32M的 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 350K |
| 代理商： | HY64UD16322M |
HY64UD16162M Series
5
Revision 1.7
March. 2002
AC TEST LOADS
Note
1. Including jig and scope capacitance.
AC CHARACTERISTICS
Vdd=2.7V~3.3V, T
A =
-25
°
C to 85
°
C(E) / -40
°
C to 85
°
C(I), unless otherwise specified
C
L
1
=30 pF
D
OUT
R
L
=50 Ohm
V
L
=1.5 V
Z
0
=50 Ohm
#
Parameter
Min.
1
2
3
4
5
6
7
8
9
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
/LB, /UB Access Time
Chip Select to Output in Low Z
Output Enable to Output in Low Z
/LB, /UB Enable to Output in Low Z
Chip Disable to Output in High Z
Out Disable to Output in High Z
/LB, /UB Disable to Output in High Z
Output Hold from Address Change
85
-
-
-
-
10
5
10
0
0
0
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max.
-
Symbol
tRC
tAA
tACS
tOE
tBA
tCLZ
tOLZ
tBLZ
tCHZ
tOHZ
tBHZ
tOH
Read Cycle
85
85
20
85
-
-
-
30
30
30
-
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
/LB, /UB Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
85
70
70
70
0
60
0
0
30
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
-
tWC
tCW
tAW
tBW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
Write Cycle
30
-
-
-
-85
Min.
70
-
-
-
-
10
5
10
0
0
0
10
Max.
-
70
70
20
70
-
-
-
20
20
20
-
70
60
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
-
20
-
-
-
-70
AC TEST CONDITIONS
T
A =
-25
°
C to 85
°
C(E) / -40
°
C to 85
°
C(I), unless otherwise specified
Parameter
Input Pulse Level
Input Rising and Fall Time
Input and Output Timing Reference Level
Output Load
Value
0.4V to 2.2V
5ns
1.5V
See Below
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| HY64UD16322M-DF85E | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HY64UD16322M-DF70E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M-DF85E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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