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參數資料
| 型號： | HY64UD16322M |
| 英文描述： | x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M |
| 中文描述： | x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |偽靜態(tài)存儲器- 32M的 |
| 文件頁數： | 4/11頁 |
| 文件大小： | 350K |
| 代理商： | HY64UD16322M |
HY64UD16162M Series
4
Revision 1.7
March. 2002
Note 1. VIL=-1.5V for pulse width less than 10ns
Undershoot is sampled, not 100% tested.
RECOMMENDED DC OPERATING CONDITION
Symbol
Vdd
V
SS
V
IH
V
IL
Parameter
Min.
2.7
0
2.2
-0.3
1
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Unit
V
V
V
V
Typ.
3.0
-
-
-
Max.
3.3
0
Vdd+0.3
0.6
DC ELECTRICAL CHARACTERISTICS
Vdd=2.7V~3.3V, T
A
= -25
°
C to 85
°
C(E) / -40
°
C to 85
°
C(I)
Sym.
Parameter
I
LI
Input Leakage Current
CAPACITANCE
(Temp = 25
°
C, f=1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance(Add, /CS1, CS2, /WE, /OE, /UB, /LB)
Output Capacitance(I/O)
Unit
pF
pF
Max.
8
10
Condition
V
IN
=0V
V
I/O
=0V
Note : These parameters are sampled and not 100% tested
Min.
-1
Unit
μ
A
Typ.
-
Max.
1
Test Condition
V
SS
≤
V
IN
≤
Vdd
V
SS
≤
V
OUT
≤
Vdd,
/CS1=V
IH
, CS2=V
IH
,
/OE=V
IH
or /WE=V
IL
I
LO
Output Leakage Current
-1
μ
A
-
1
I
CC
Operating Power Supply Current
-
mA
-
3
/CS1=V
IL
, CS2=V
IH
,
V
IN
=V
IH
or V
IL
, I
I/O
=0mA
I
CC1
Average Operating Current
-
mA
-
25
-
mA
-
5
/CS1
≤
0.2V, CS2
≥
Vdd-0.2V,
V
IN
≤
0.2V or V
IN
≥
Vdd-0.2V,
Cycle Time=1
μ
s
.
100% Duty, I
I/O
=0mA
I
SB
TTL Standby Current
-
-
-
mA
μ
A
μ
A
-
-
-
0.5
85
75
/CS1,CS2=V
IH
or /UB,/LB= V
IH
/CS1, CS2
≥
Vdd
-
0.2V
or /UB,/LB
≥
Vdd
-
0.2V
CS2
≤
V
SS+
0.2V
I
SB1
Standby Current(CMOS Input)
V
OL
V
OH
Output Low Voltage
Output High Voltage
-
V
V
-
-
0.4
-
I
OL
=2.1mA
I
OH
=-1.0mA
2.4
I
CC2
I
DPD
Deep Power Down Curent
-
μ
A
-
2
70ns
85ns
-
mA
-
20
/CS1=V
IL
, CS2=V
IH
,
V
IN
=V
IH
or V
IL
, Cycle Time=Min.
100% Duty, I
I/O
=0mA
70ns
85ns
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