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參數(shù)資料
| 型號： | HY63V8400 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512Kx8Bit CMOS FAST SRAM |
| 中文描述： | 512Kx8Bit的CMOS快速靜態(tài)存儲器 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 108K |
| 代理商： | HY63V8400 |
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 / Jan.99 Hyundai Semiconductor
HY63V8400 Series
512Kx8bit CMOS FAST SRAM
DESCRIPTION
PRELIMINARY
The HY63V8400 is a 4,194,304-bit high-speed
Static Random Access Memory organized as
524,288 words by 8-bits. The HY63V8400 uses
eight common input and output lines and has an
output enable pin which operates faster than.
address access time at read cycle. The device is
fabricated using Hyundai's advanced CMOS
process and designed for high-speed circuit
technology. It is particularly well suited for use in
high-density high-speed system applications
FEATURES
Single 3.3V±0.3V Power Supply
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low data Retention Voltage:
- 2.0V(min) –L-ver. Only
Center Power/Ground Pin Configuration
Standard pin configuration
-
36pin 400mil SOJ
-
44pin 400mil TSOP-ll
Product
No.
HY63V8400
HY63V8400
HY63V8400
Supply
Voltage(V)
3.3
3.3
3.3
Speed
(ns)
10
12
15
Operation
Current(mA)
200
190
180
Standby Current(mA)
L
1
1
1
10
10
10
PIN CONNECTION BLOCK DIAGRAM
SOJ TSOP-II
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
I/O1~I/O8
Pin Function
Pin Name
A0~A18
Vcc
Vss
NC
Pin Function
Address Input
Power(+3.3V)
Ground
No Connection
Chip Select
Write Enable
Output Enable
Data Input/Output
NC
A13
A18
Vcc
Vss
I/A5
A6
1
2
3
4
5
6
7
8
9
10
36
SOJ
A 1 2
N C
A 1 7
IV c c
V s s
/W E
A 5
1
2
3
4
5
6
7
8
9
2 0
3 6
1 0
TSOP-II
N C
N C
4 3
4 4
ROW
DECODER
MEMORY ARRAY
512x1024x8
S
W
O
I/O1
I/O8
D
A
A0
A18
/CS
/OE
/WE
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