參數(shù)資料
型號: HY62WT08081E-DTE
廠商: Hynix Semiconductor Inc.
英文描述: HY62WT08081E Series 32Kx8bit CMOS SRAM
中文描述: HY62WT08081E系列32Kx8bit CMOS SRAM的
文件頁數(shù): 2/13頁
文件大?。?/td> 205K
代理商: HY62WT08081E-DTE
HY62WT08081E Series
DESCRIPTION
The HY62WT08081E is a high-speed, low power
and 32,786 X 8-bits CMOS Static Random
Access Memory fabricated using Hynix's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
Product
Voltage
Speed
Operation
No.
(V)
(ns)
Current(mA)
4.5~5.5
55/70
10
HY62WT08081E-C
2.7~3.6
70*/85
2
4.5~5.5
55/70
10
HY62WT08081E-E
2.7~3.6
70*/85
2
4.5~5.5
55/70
10
HY62WT08081E-I
2.7~3.6
70*/85
2
Note 1. Current value is max.
* 70ns is available with 30pF test load
PIN CONNECTION
Rev 04 / May . 2001
2
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low power consumption
Battery backup(LL-part)
- 2.0V(min.) data retention
Standard pin configuration
- 28 pin 600mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard)
Standby Current(uA)
LL-part
10
5
20
8
20
8
Temperature
(
°
C)
0~70(Normal)
-25~85(Extended)
-40~85(Industrial)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
28
A13
A8
A7
IVss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
I/O8
I/O7
/A9
Vcc
A7
A6
PDIP SOP TSOP-I(Standard)
PIN DESCRIPTION BLOCK DIAGRAM
Pin Name
Pin Function
/CS
Chip Select
/WE
Write Enable
/OE
Output Enable
A0 ~ A14
Address Inputs
I/O1 ~ I/O8
Data Input/Output
Vcc
Power(
+
5.0V)
Vss
Ground
A14
C
A0
ROW DECODER
MEMORY ARRAY
512x512
S
O
I/O1
I/O8
A
/CS
/OE
/WE
W
C
L
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