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參數(shù)資料
| 型號： | HY62WT08081E-DTC |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | HY62WT08081E Series 32Kx8bit CMOS SRAM |
| 中文描述： | HY62WT08081E系列32Kx8bit CMOS SRAM的 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 205K |
| 代理商： | HY62WT08081E-DTC |
HY62WT08081E Series
ORDERING INFORMATION
Part No.
Rev 04 / May. 2001
2
Speed
4.5~5.5V
2.7~3.6V
Power
Temp
Package
HY62WT08081E-DPC
HY62WT08081E-DPE
HY62WT08081E-DPI
HY62WT08081E-DGC
HY62WT08081E-DGE
HY62WT08081E-DGI
HY62WT08081E-DTC
HY62WT08081E-DTE
HY62WT08081E-DTI
Note * 70ns is available with 30pF test load
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, V
IN,
V
OUT
Power Supply,
Input/Output Voltage
T
A
Operating Temperature
0 to 70
°
C
-25 to 85
°
C
-40 to 85
°
C
0 to 70
°
C
-25 to 85
°
C
-40 to 85
°
C
0 to 70
°
C
-25 to 85
°
C
-40 to 85
°
C
PDIP
SOP
55/70
70*/85
LL-part
TSOP-I Standard
Parameter
Rating
-0.3 to 7.0
-0.3 to 4.6
0 to 70
-25 to 85
-40 to 85
-65 to 150
1.0
50
260
10
Unit
V
V
°
C
°
C
°
C
°
C
W
mA
4.5~5.5V
2.7~3.6V
HY62WT08081E-C
HY62WT08081E-E
HY62WT08081E-I
T
STG
P
D
I
OUT
T
SOLDER
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
°
C
sec
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