參數(shù)資料
型號(hào): HY62UF16201A
廠商: Hynix Semiconductor Inc.
英文描述: 128Kx16bit full CMOS SRAM
中文描述: 128Kx16bit充分的CMOS的SRAM
文件頁數(shù): 4/11頁
文件大?。?/td> 254K
代理商: HY62UF16201A
HY62UF16201A Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Typ.
Vcc
Supply Voltage
2.7
3.0
Vss
Ground
0
V
IH
Input High Voltage
2.2
V
IL
Input Low Voltage
-0.3
(1)
Note :
1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
T
A
= 0
°
C to 70
°
C/ -40
°
C to 85
°
C (I)
Symbol
Parameter
Test Condition
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
I
LO
Output Leakage Current Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL,
/
UB
=
/LB = V
IH
Icc
Operating Power Supply
Current
I
I/O =
0mA
Cycle Time=Min.100% duty,
/CS = V
IL,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
Current
Cycle time = 1us,
/CS < 0.2V,
V
IN
<0.2V, I
I/O =
0mA
I
SB
Standby
Current
(TTL Input)
/UB & /LB = V
IH,
V
IN
= V
IH
or V
IL
I
SB1
Standby Current
(CMOS Input)
/UB = /LB > Vcc - 0.2V,
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
V
OL
Output Low Voltage
I
OL
= 2.1mA
V
OH
Output High Voltage
I
OH =
-1.0mA
Notes :
1. Typical values are at Vcc = 3.0V, T
A
= 25
°
C
2. Typical values are sampled and not 100% tested
CAPACITANCE
(Temp = 25
°
C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance(Add, /CS, /WE, /OE)
C
OUT
Output Capacitance(I/O)
Note :
1. These parameters are sampled and not 100% tested
Rev.08 / Mar. 2002
3
Max.
3.3
0
Vcc+0.3
0.6
Unit
V
V
V
V
0
-
-
Min.
-1
-1
Typ.
-
-
Max.
1
1
Unit
uA
uA
/CS = V
IL
, V
IN
= V
IH
or V
IL,
-
-
3
mA
-
-
45
mA
I
CC1
Average Operating
5
mA
/CS = V
IH
or
-
-
0.3
mA
SL
LL
-
-
-
-
2
10
0.4
-
uA
uA
V
V
/CS > Vcc - 0.2V or
0.5
-
-
2.4
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
8
10
Unit
pF
pF
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