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參數(shù)資料
| 型號： | HY62UF16201A-I |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 128Kx16bit full CMOS SRAM |
| 中文描述： | 128Kx16bit充分的CMOS的SRAM |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 254K |
| 代理商： | HY62UF16201A-I |
HY62UF16201A Series
ORDERING INFORMATION
Part No.
Speed
Power
HY62UF16201ALLF
55/70/85/100
LL-part
HY62UF16201ALLF-I
55/70/85/100
LL-part
HY62UF16201ASLF
55/70/85/100
SL-part
HY62UF16201ASLF-I
55/70/85/100
SL-part
HY62UF16201ALLF1
55/70/85/100
LL-part
HY62UF16201ALLF1-I
55/70/85/100
LL-part
HY62UF16201ASLF1
55/70/85/100
SL-part
HY62UF16201ASLF1-I
55/70/85/100
SL-part
Note :
1. Blank : Commercial, I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
V
IN,
V
OUT
Input/Output Voltage
Vcc
Power Supply
T
A
Operating Temperature
T
STG
Storage Temperature
P
D
Power Dissipation
T
SOLDER
Ball Soldering Temperature & Time
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
Rev.08 / Mar. 2002
2
Temp.
I
I
I
I
Package
FBGA(7mm X 8mm)
FBGA(7mm X 8mm)
FBGA(7mm X 8mm)
FBGA(7mm X 8mm)
FBGA(6mm X 8mm)
FBGA(6mm X 8mm)
FBGA(6mm X 8mm)
FBGA(6mm X 8mm)
Rating
Unit
V
V
°
C
°
C
°
C
W
°
C
sec
Remark
-0.2 to 3.6
-0.2 to 4.6
0 to 70
-40 to 85
-55 to 150
1.0
260
10
HY62UF16201A
HY62UF16201A-I
I/O
/CS
/WE
/OE
/LB
/UB
Mode
I/O1~I/O8
High-Z
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
Power
H
X
L
L
L
L
X
X
H
H
H
L
X
X
H
H
L
X
X
H
L
X
L
H
L
L
H
L
X
H
X
L
H
L
L
H
L
L
Deselected
Deselected
Output Disabled
Output Disabled
Read
Write
Standby
Standby
Active
Active
Active
Active
Note :
1. H=V
IH
, L=V
IL
, X=don't care
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
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| HY62V8200B | HY62V8200B Series 256Kx8bit CMOS SRAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY62UF16201ALLF10IR | 制造商:HYNIX 功能描述:* |
| HY62UF16403A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16|3V|55/70/85|Super Low Power Slow SRAM - 4M |
| HY62UF16403A-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Kx16bit full CMOS SRAM |
| HY62UF16403ALLM | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Kx16bit full CMOS SRAM |
| HY62UF16403ALLM-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Kx16bit full CMOS SRAM |
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