- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367355 > HY5V62CF-S x32 SDRAM PDF資料下載
參數(shù)資料
| 型號： | HY5V62CF-S |
| 英文描述： | x32 SDRAM |
| 中文描述： | X32號，內(nèi)存 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 201K |
| 代理商： | HY5V62CF-S |
Rev. 0.4/Nov. 01
8
HY5V62CF
AC CHARACTERISTICS
I
(AC operating conditions unless otherwise noted)
Note :
1.Assume tR / tF (input rise and fall time ) is 1ns
2.Access times to be measured with input signals of 1v/ns edge rate, 0.8v to 2.0v
3.Data-out hold time to be measured under 30pF load condition, without Vt termination
Parameter
Symbol
-7
-S
Unit
Note
Min
Max
Min
Max
System clock
cycle time
CAS Latency = 3
tCK3
7
1000
10
1000
ns
CAS Latency = 2
tCK2
10
12
ns
Clock high pulse width
tCHW
2.5
-
3
-
ns
1
Clock low pulse width
tCLW
2.5
-
3
-
ns
1
Access time from clock
CAS Latency = 3
tAC3
-
5.4
-
6
ns
2
CAS Latency = 2
tAC2
-
6
-
8
ns
Data-out hold time
tOH
2.7
-
3
-
ns
3
Data-Input setup time
tDS
1.5
-
2
-
ns
1
Data-Input hold time
tDH
0.8
-
1
-
ns
1
Address setup time
tAS
1.5
-
2
-
ns
1
Address hold time
tAH
0.8
-
1
-
ns
1
CKE setup time
tCKS
1.5
-
2
-
ns
1
CKE hold time
tCKH
0.8
-
1
-
ns
1
Command setup time
tCS
1.5
-
2
-
ns
1
Command hold time
tCH
0.8
-
1
-
ns
1
CLK to data output in low Z-time
tOLZ
1.5
-
2
-
ns
CLK to data output in
high Z-time
CAS Latency = 3
tOHZ3
5.4
6
ns
CAS Latency = 2
tOHZ2
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5V66GF | 4Mx16|3.3V|4K|H|SDR SDRAM - 64M |
| HY5V66GF-H | x16 SDRAM |
| HY5V66GF-P | x16 SDRAM |
| HY5W26CF-B | x16 SDRAM |
| HY57W281620HCT-B | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5V66EF6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY5V66EF6-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY5V66EF6-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY5V66EF6-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY5V66EF6-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。