參數(shù)資料
型號(hào): HY5DV281622DT-5
廠商: HYNIX SEMICONDUCTOR INC
元件分類(lèi): DRAM
英文描述: 128M(8Mx16) GDDR SDRAM
中文描述: 8M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁(yè)數(shù): 31/31頁(yè)
文件大?。?/td> 294K
代理商: HY5DV281622DT-5
Rev. 0.5 / Aug. 2003
31
HY5DV281622DT
10.26 (0.404)
10.05 (0.396)
11.94 (0.470)
11.79 (0.462)
22.33 (0.879)
22.12 (0.871)
1.194 (0.0470)
0.991 (0.0390)
0.65 (0.0256) BSC
0.35 (0.0138)
0.25 (0.0098)
0.15 (0.0059)
0.05 (0.0020)
BASE PLANE
SEATING PLANE
0.597 (0.0235)
0.406 (0.0160)
0.210 (0.0083)
0.120 (0.0047)
0 ~ 5 Deg.
Unit : mm(Inch)
PACKAGE INFORMATION
400mil 66pin Thin Small Outline Package
Note
: Package do not mold protrusion. Allowable protrusion of both sides is 0.4mm.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DV281622DT-6 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
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HY5DV281622DTP-36 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
HY5DV281622DTP-4 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM