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參數(shù)資料
| 型號： | HY5DU121622CTP-5 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 512Mb(32Mx16) GDDR SDRAM |
| 中文描述： | 32M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| 文件頁數(shù)： | 18/29頁 |
| 文件大?。?/td> | 233K |
| 代理商： | HY5DU121622CTP-5 |
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Rev. 0.3 / Apr. 2005
18
1
HY5DU121622CTP
BURST DEFINITION
BURST LENGTH & TYPE
Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst
length determines the maximum number of column locations that can be accessed for a given Read or Write com-
mand. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2 -Ai when the burst length
is set to four and by A3 -Ai when the burst length is set to eight (where Ai is the most significant column address bit
for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location
within the block. The programmed burst length applies to both Read and Write bursts.
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Burst Definitionon Table
Burst Length
Starting Address (A2,A1,A0)
Sequential
Interleave
2
XX0
0, 1
0, 1
XX1
1, 0
1, 0
4
X00
0, 1, 2, 3
0, 1, 2, 3
X01
1, 2, 3, 0
1, 0, 3, 2
X10
2, 3, 0, 1
2, 3, 0, 1
X11
3, 0, 1, 2
3, 2, 1, 0
8
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5DU121622CTP-6 | 512Mb(32Mx16) GDDR SDRAM |
| HY5DU12822B | CAP CERAMIC 15PF 50V NP0 0805 |
| HY5DU121622B | 512Mb DDR SDRAM |
| HY5DU121622BLTP | 512Mb DDR SDRAM |
| HY5DU121622BLTP-X | 512Mb DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DU121622CTP-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb(32Mx16) GDDR SDRAM |
| HY5DU121622CTP-X | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM |
| HY5DU121622DFP-D43 | 制造商:SK Hynix Inc 功能描述: |
| HY5DU121622DFP-D43I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM |
| HY5DU121622DFP-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM |
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