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參數(shù)資料
| 型號(hào)： | HY5DS573222F-28 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 256M(8Mx32) GDDR SDRAM |
| 中文描述： | 8M X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封裝： | 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144 |
| 文件頁數(shù)： | 19/28頁 |
| 文件大?。?/td> | 326K |
| 代理商： | HY5DS573222F-28 |
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HY5DS573222F(P)
Rev. 1.0 / Feb. 2005
19
CAS LATENCY
The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the
availability of the first burst of output data. The latency can be programmed 5 or 4 clocks.
If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident
with clock edge n + m.
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
DLL RESET
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon return-
ing to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically
disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any
time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally
applied clock before an any command can be issued.
OUTPUT DRIVER IMPEDANCE CONTROL
This device supports both Half strength driver and Matched impedance driver, intended for lighter load and/or point-to-
point environments. Half strength driver is to define about 50% of Full drive strength which is specified to be SSTL_2,
Class II, and Matched impedance driver, about 30% of Full drive strength.
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| HY5DS573222F-33 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-36 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-4 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222FP | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222FP-28 | 256M(8Mx32) GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DS573222F-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-4 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
| HY5DS573222FP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
| HY5DS573222FP-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
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