參數(shù)資料
型號(hào): HY57V641620ESTP-7
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
中文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
文件頁(yè)數(shù): 6/13頁(yè)
文件大?。?/td> 122K
代理商: HY57V641620ESTP-7
Rev. 1.5 / Feb. 2005
6
Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY57V641620E(L/S)T(P) Series
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1
BA0
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
0
0
OP Code
0
0
CAS Latency
BT
Burst Length
OP Code
A9
Write Mode
0
Burst Read and Burst Write
1
Burst Read and Single Write
Burst Type
A3
Burst Type
0
Sequential
1
Interleave
Burst Length
A2
A1
A0
Burst Length
A3 = 0
A3= 1
0
0
0
1
1
0
0
1
2
2
0
1
0
4
4
0
1
1
8
8
1
0
0
Reserved
Reserved
1
0
1
Reserved
Reserved
1
1
0
Reserved
Reserved
1
1
1
Full Page
Reserved
CAS Latency
A6
A5
A4
CAS Latency
0
0
0
Reserved
0
0
1
1
0
1
0
2
0
1
1
3
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
相關(guān)PDF資料
PDF描述
HY57V641620ESTP-H 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
HY57V641620ET 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
HY57V641620ET-5 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
HY57V641620ET-6 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
HY57V641620ET-7 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY57V641620ESTP-H 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
HY57V641620ET 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
HY57V641620ET-5 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
HY57V641620ET-6 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
HY57V641620ET-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O