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參數(shù)資料
| 型號： | HY57V641620ESTP-7 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 122K |
| 代理商： | HY57V641620ESTP-7 |
Rev. 1.5 / Feb. 2005
11
Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY57V641620E(L/S)T(P) Series
AC CHARACTERISTICS II
(AC operating conditions unless otherwise noted)
Note:
1. A new command can be given t
RRC
after self refresh exit.
Parameter
Symbol
5
6
7
H
Unit Note
Min
Max
Min
Max
Min
Max
Min
Max
RAS Cycle Time
Operation
tRC
55
-
60
-
63
-
63
-
ns
RAS Cycle Time
Auto Refresh tRRC
55
-
60
-
63
-
63
-
ns
RAS to CAS Delay
tRCD
15
-
18
-
20
-
20
-
ns
RAS Active Time
tRAS
38.7
100K
42
100K
42
100K
42
120K
ns
RAS Precharge Time
tRP
15
-
18
-
20
-
20
-
ns
RAS to RAS Bank Active Delay
tRRD
10
-
12
-
14
-
15
-
ns
CAS to CAS Delay
tCCD
1
-
1
-
1
-
1
-
CLK
Write Command to Data-In De-
lay
tWTL
0
-
0
-
0
-
0
-
CLK
Data-in to Precharge Command tDPL
2
-
2
-
2
-
2
-
CLK
Data-In to Active Command
tDAL
tDPL + tRP
DQM to Data-Out Hi-Z
tDQZ
2
-
2
-
2
-
2
-
CLK
DQM to Data-In Mask
tDQM
0
-
0
-
0
-
0
-
CLK
MRS to New Command
tMRD
2
-
2
-
2
-
2
-
CLK
Precharge to Data
Output High-Z
CL = 3
tPROZ3
3
-
3
-
3
-
3
-
CLK
CL = 2
tPROZ2
2
-
2
-
2
-
2
-
CLK
Power Down Exit Time
tDPE
1
-
1
-
1
-
1
-
CLK
Self Refresh Exit Time
tSRE
1
-
1
-
1
-
1
-
CLK
1
Refresh Time
tREF
-
64
-
64
-
64
-
64
ms
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PDF描述 |
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| HY57V641620ESTP-H | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ET | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ET-5 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ET-6 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V641620ESTP-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ET | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ET-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ET-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ET-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
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