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參數(shù)資料
| 型號： | HY57V283220T-6I |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封裝： | 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 292K |
| 代理商： | HY57V283220T-6I |
Rev. 0.6/Nov. 02
9
HY57V283220T-I / HY5V22F-I
AC CHARACTERISTICS II (AC operating conditions unless otherwise noted)
Parameter
Symbol
-5
-55
-6
-7
-8
-P
-S
Unit
Not
e
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
RAS cycle time
Operation
tRC
55
-
55
-
60
-
63
-
64
-
70
-
70
-
ns
Auto Refresh
tRRC
55
-
55
-
60
-
63
-
64
-
70
-
70
-
ns
RAS to CAS delay
tRCD
15
-
16.5
-
18
-
20
-
20
-
20
-
20
-
ns
RAS active time
tRAS
38.7
100
K
38.7
100
K
42
100
K
42
100
K
48
100
K
50
100
K
50
100
K
ns
RAS precharge time
tRP
15
-
16.5
-
18
-
20
-
20
-
20
-
20
-
ns
RAS to RAS bank active delay
tRRD
2
-
2
-
2
-
2
-
2
-
20
-
20
-
CLK
CAS to CAS delay
tCCD
1
-1-1
-1-1-
1
-
1
-
CLK
Write command to data-in delay
tWTL
0
-
0
-
0
-
0
-
0
-
0
-
0
-
CLK
Data-in to precharge command
tDPL
1
-
1
-
1
-
1
-
1
-
1
-
1
-
CLK
Data-in to active command
tDAL
4-4-4
-
4-4-
4
-
4
-
CLK
DQM to data-out Hi-Z
tDQZ
2
-
2
-
2
-
2
-
2
-
2
-
2
-
CLK
DQM to data-in mask
tDQM
0-0-0
-
0-0-
0
-
0
-
CLK
MRS to new command
tMRD
2-2-2
-
2-2-
2
-
2
-
CLK
Precharge to
data output Hi-Z
CAS Latency = 3
tPROZ3
3
-3-3
-3-3-
3
-
3
-
CLK
CAS Latency = 2
tPROZ2
2
-2-2
-2-2-
2
-
2
-
CLK
Power down exit time
tPDE
1-1-1
-
1-1-
1
-
1
-
CLK
Self refresh exit time
tSRE
1-1-1
-
1-1-
1
-
1
-
CLK
1
Refresh Time
tREF
-64-64
-64-
64
-64
-
64
-
64
ms
Note :
1. A new command can be given tRRC after self refresh exit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V283220T-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx32|3.3V|4K|55/6/7/8/P/S|SDR SDRAM - 128M |
| HY57V283220T-P | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
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