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參數(shù)資料
| 型號(hào)： | HY57V283220T-6I |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封裝： | 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 |
| 文件頁(yè)數(shù)： | 12/14頁(yè) |
| 文件大?。?/td> | 292K |
| 代理商： | HY57V283220T-6I |
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Rev. 0.6/Nov. 02
7
HY57V283220T-I / HY5V22F-I
DC CHARACTERISTICS II (DC operating conditions unless otherwise noted)
Note :
1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V283220T(HY5V22F)-5I/55I/6I/7I/8I/PI/SI
4.HY57V283220LT(HY5V22LF)-5I/55I/6I/7I/8I/PI/SI
Parameter
Symbol
Test Condition
Speed
Unit
Note
-5
-55
-6
-7
-8
-P
S
Operating Current
IDD1
Burst length=1, One bank active
tRC
≥ tRC(min), IOL=0mA
120
110
100
90
mA
1
Precharge Standby
Current
in power down mode
IDD2P
CKE
≤ VIL(max), tCK = 10ns
2
mA
IDD2PS
CKE
≤ VIL(max), tCK =
∞
1
Precharge Standby
Current
in non power down mode
IDD2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 10ns
Input signals are changed one time during
2clks. All other pins
≥ VDD-0.2V or ≤ 0.2V
14
mA
IDD2NS
CKE
≥ VIH(min), tCK =
∞
Input signals are stable.
9
Active Standby Current
in power down mode
IDD3P
CKE
≤ VIL(max), tCK = 10ns
7
mA
IDD3PS
CKE
≤ VIL(max), tCK =
∞
6
Active Standby Current
in non power down mode
IDD3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 10ns
Input signals are changed one time during
2clks. All other pins
≥ VDD-0.2V or ≤ 0.2V
17
mA
IDD3NS
CKE
≥ VIH(min), tCK =
∞
Input signals are stable.
13
Burst Mode Operating
Current
IDD4
t
tCK
≥ tCK(min), IOL=0mA
All banks active
CL=3
230
220
200
180
150
130
mA
1
CL=2
-
130
Auto Refresh Current
IDD5
tRC
≥ tRC(min), All banks active
170
160
150
140
mA
2
Self Refresh Current
IDD6
CKE
≤ 0.2V
2
mA
3
0.8
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V283220T-7 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-8 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-H | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-I | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4Mx32|3.3V|4K|55/6/7/8/P/S|SDR SDRAM - 128M |
| HY57V283220T-P | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
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