參數資料
型號: HY29F040A
廠商: Hynix Semiconductor Inc.
英文描述: 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
中文描述: 為512k × 8位CMOS 5.0伏只,扇區(qū)擦除閃存
文件頁數: 18/40頁
文件大小: 282K
代理商: HY29F040A
18
HY29F040A
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Package .............................. -65°C to + 125°C
Ambient Temperature
With Power Applied .......................... -55°C to + 125°C
Voltage with Respect to Ground
All pins except A9 (1) ..........................-2.0V to + 7.0V
Vcc
(1)
...............................................-2.0V to + 7.0V
A9
(2)
...............................................-2.0V to + 14.0V
Output Short Circuit Current
(3)
.........................200 mA
Notes:
1.
Minimum DC voltage on input or I/O pins
is - 0.5V. During voltage transitions, inputs may
overshoot Vss to -2.0V for periods of up to 20 ns.
Maximum DC voltage on output and I/O pins is Vcc +
0.5V. During Voltage transitions, outputs may
overshoot to Vcc + 2.0V for periods up to 20 ns.
2. Minimum DC input voltage on A9 pin is -0.5V.
During voltage transitions, A9 may overshoot Vss
to -2.0V for periods of up to 20 ns. Maximum DC input
voltage on A9 is + 13.5V which may overshoot to 14.0V
for periods of up to 20 ns.
3.
No more than one output shorted at a time. Duration
of the short circuit should not be greater than one
second.
OPERATING RANGES
Commercial( C) Devices
..................... 0°C to + 70°C
Industrial (I) Devices
........................ -40°C to + 85°C
Extended (E) Devices
..................... -55°C to + 125°C
Vcc Supply Voltages
.................................................
Vcc for HY29F040A-55 ..................+ 4.75V to + 5.25V
Vcc for HY29F040A-70, -90, -120, -150
..........................................................+ 4.5V to + 5.5V
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure of the device to absolute maxi-
mum rating conditions for extended periods may affect
device reliability.
Notes:
1.
Operating ranges define those limits between which
the functionality of the device is guaranteed.
相關PDF資料
PDF描述
HY29F080T70 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080G12 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080G70 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080G90 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
相關代理商/技術參數
參數描述
HY29F040AC-12 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AC-12E 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AC-12I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AC-15 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AC-15E 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory