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參數(shù)資料
| 型號(hào)： | HV300 |
| 廠(chǎng)商： | Supertex, Inc. |
| 元件分類(lèi)： | 脈沖抑制器 |
| 英文描述： | Hotswap, Inrush Current Limiter Controllers |
| 中文描述： | 熱插拔，浪涌電流限制器控制器 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | HV300 |
HV300/HV310
2
Electrical Characteristics
(V
IN
=-10V to -90V, -40
°
C
≤
T
A
≤
+85
°
C unless otherwise noted)
Symbol
Parameters
Min
Typ
Max
Unit
Conditions
Supply
(Referenced to V
DD
pin)
V
EE
Supply Voltage
I
EE
Supply Current
I
EE
Standby Mode Supply Current
-90
-10
650
400
V
μ
A
μ
A
550
330
V
EE
= -48V, Mode = Limiting
V
EE
= -48V, Mode = Standby
OV and UV Control
(Referenced to V
EE
pin)
V
UVH
UV High Threshold
V
UVL
UV Low Threshold
V
UVHY
UV Hysteresis
I
UV
UV Input Current
V
OVH
OV High Threshold
V
OVL
OV Low Threshold
V
OVHY
OV Hysteresis
I
OV
OV Input Current
1.26
1.16
100
V
V
Low to High Transition
High to Low Transition
mV
nA
V
V
mV
nA
1.0
V
UV
= V
EE
+ 1.9V
Low to High Transition
High to Low Transition
1.26
1.16
100
1.0
V
OV
= V
EE
+ 0.5V
Current Limit
(Referenced to V
EE
pin)
V
SENSE
Current Limit Threshold Voltage
40
50
60
mV
V
UV
= V
EE
+ 1.9V,
V
OV
= V
EE
+ 0.5V
Gate Drive Output
(Referenced to V
EE
pin)
V
GATE
Maximum Gate Drive Voltage
9.0
10
11
V
V
UV
= V
EE
+ 1.9V,
V
OV
= V
EE
+ 0.5V
V
UV
= V
EE
+ 1.9V,
V
OV
= V
EE
+ 0.5V,
I
GATEUP
Gate Drive Pull-Up Current
500
μ
A
I
GATEDOWN
Gate Drive Pull-Down Current
40
mA
V
UV
= V
EE
, V
OV
= V
EE
+ 0.5V
Power Good Output
(Referenced to V
EE
pin)
V
PWRGD
Power Good Pin Breakdown Voltage
V
PWRGD
Power Good Pin Output Low Voltage
90
V
V
0.5
0.8
I
PWRGD
= 1mA
Dynamic Characterstics
t
GATEHLOV
OV Delay
t
GATEHLUV
UV Delay
500
500
ns
ns
Note 1: This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.
Note 2: This voltage depends on the characteristics of the external N-Channel MOSFET. V
GS(th)
= 3V for an IRF530.
*IRF530 is a registered trademark of International Rectifier.
Timing Control –
Test Conditions: C
=100
μ
F, C
RAMP
=10nF, V
UV
= V
EE
+1.9V, V
OV
= V
EE
+0.5V, External MOSFET is IRF530*
I
RAMP
t
POR
t
RISE
t
LIMIT
t
PWRGD
V
RAMP
Ramp Pin Output Current
Time from UV to Gate Turn On
Time from Gate Turn On to V
SENSE
Limit
Duration of Current Limit Mode
Time from Current Limit to PWRGD
Voltage on Ramp Pin in Current Limit Mode
10
μ
A
ms
μ
s
ms
ms
V
V
SENSE
= 0V
(Note 1)
2.0
400
5.0
5.0
3.6
(Note 2)
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