參數(shù)資料
型號: HUF76419P3
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(27A, 60V, 0.040Ω N溝道邏輯電平功率MOS場效應管)
中文描述: 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 6/9頁
文件大小: 334K
代理商: HUF76419P3
4-6
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
FIGURE 21. SWITCHING TIME TEST CIRCUIT
FIGURE 22. SWITCHING TIME WAVEFORM
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
Q
gs
V
GS
= 1V
Q
g(5)
V
GS
= 5V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
0
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
HUF76419P3, HUF76419S3S
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相關代理商/技術參數(shù)
參數(shù)描述
HUF76419S3S 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76419S3ST 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76419S3ST_F085 功能描述:MOSFET 60V, 29A, 35mOhm N-Channel Mosfet RoHS:否 制造商:Fairchild Semiconductor 晶體管極性:N-Channel 汲極/源極擊穿電壓:60 V 閘/源擊穿電壓:16 V 漏極連續(xù)電流:29 A 電阻汲極/源極 RDS(導通):35 mOhms 配置:Single 最大工作溫度:+ 175 C 安裝風格:SMD/SMT 封裝 / 箱體:TO-263AB 封裝:Reel
HUF76419S3ST_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76419S3ST_R4908 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUF76419S3ST_R4908 TO-263AB, SINGLE, 制造商:Rochester Electronics LLC 功能描述:- Bulk