型號(hào): | HUF76419P3 |
廠商: | INTERSIL CORP |
元件分類: | 功率晶體管 |
英文描述: | 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(27A, 60V, 0.040Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
中文描述: | 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
文件頁(yè)數(shù): | 3/9頁(yè) |
文件大?。?/td> | 334K |
代理商: | HUF76419P3 |
相關(guān)PDF資料 |
PDF描述 |
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HUF76423P3 | 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(33A, 60V, 0.035Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
HUF76439P3 | 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(71A, 60V, 0.014Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
HUF76439S3S | 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(71A, 60V, 0.014Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
HUF76619D3 | 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(18A, 100V, 0.087Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
HUF76619D3S | 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(18A, 100V, 0.087Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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HUF76419S3S | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
HUF76419S3ST | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
HUF76419S3ST_F085 | 功能描述:MOSFET 60V, 29A, 35mOhm N-Channel Mosfet RoHS:否 制造商:Fairchild Semiconductor 晶體管極性:N-Channel 汲極/源極擊穿電壓:60 V 閘/源擊穿電壓:16 V 漏極連續(xù)電流:29 A 電阻汲極/源極 RDS(導(dǎo)通):35 mOhms 配置:Single 最大工作溫度:+ 175 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TO-263AB 封裝:Reel |
HUF76419S3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
HUF76419S3ST_R4908 | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUF76419S3ST_R4908 TO-263AB, SINGLE, 制造商:Rochester Electronics LLC 功能描述:- Bulk |