參數(shù)資料
型號: HUF76419P3
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(27A, 60V, 0.040Ω N溝道邏輯電平功率MOS場效應(yīng)管)
中文描述: 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 5/9頁
文件大小: 334K
代理商: HUF76419P3
4-5
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.4
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
100
1000
0.1
1
10
2000
10
60
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
2
4
6
8
10
0
5
10
15
20
25
0
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 29A
I
D
= 19A
I
D
= 10A
WAVEFORMS IN
DESCENDING ORDER:
50
100
150
200
250
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 18A
t
r
t
f
t
d(ON)
t
d(OFF)
50
100
150
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 30V, I
D
= 29A
t
d(OFF)
t
r
t
d(ON)
t
f
HUF76419P3, HUF76419S3S
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