參數(shù)資料
型號(hào): HUF76145S3S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: RF CONNECTOR; SMA FEMALE, 2 HOLE PANEL MOUNT, SOLDER CUP CONTACT
中文描述: 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 219K
代理商: HUF76145S3S
2001 Fairchild Semiconductor Corporation
HUF76145P3, HUF76145S3S Rev. B
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
2
3
4
5
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
60
120
I
D
,
150
o
C
-40
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
90
30
0
30
60
0
2
3
4
90
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3.5V
V
GS
= 3V
150
1
120
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
10
20
0
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
6
10
8
I
D
= 75A
I
D
= 50A
I
D
= 25A
r
D
,
O
)
5
15
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
1.2
1.5
1.8
-60
0
60
120
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
180
0.9
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
-60
0
60
120
0.4
0.6
1.0
1.4
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
180
0.8
1.2
1.2
1.1
1.0
0.9
-60
0
60
120
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
180
HUF76145P3, HUF76145S3S
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