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參數(shù)資料
| 型號(hào)： | HUF76145S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF CONNECTOR; SMA FEMALE, 2 HOLE PANEL MOUNT, SOLDER CUP CONTACT |
| 中文描述： | 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 219K |
| 代理商： | HUF76145S3S |
2001 Fairchild Semiconductor Corporation
HUF76145P3, HUF76145S3S Rev. B
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
75A,
R
L
= 0.20
, V
GS
=
10V,
R
GS
= 2.2
(Figure 16)
-
-
110
ns
Turn-On Delay Time
t
d(ON)
-
16
-
ns
Rise Time
t
r
-
57
-
ns
Turn-Off Delay Time
t
d(OFF)
-
53
-
ns
Fall Time
t
f
-
38
-
ns
Turn-Off Time
t
OFF
-
-
135
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V,
I
D
75A,
R
L
= 0.20
I
g(REF)
= 1.0mA
(Figure 14)
-
130
156
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
73
88
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
4.65
5.6
nC
Gate to Source Gate Charge
Q
gs
-
12.30
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
40.00
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
4900
-
pF
Output Capacitance
C
OSS
-
2520
-
pF
Reverse Transfer Capacitance
C
RSS
-
560
-
pF
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 75A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
115
ns
Reverse Recovered Charge
Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
255
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM
CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
20
40
60
80
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
HUF76145P3, HUF76145S3S
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| HUF76407D3 | 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76407D3S | 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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