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參數(shù)資料
| 型號(hào)： | HUF76145S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF CONNECTOR; SMA FEMALE, 2 HOLE PANEL MOUNT, SOLDER CUP CONTACT |
| 中文描述： | 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大小： | 219K |
| 代理商： | HUF76145S3S |
2001 Fairchild Semiconductor Corporation
HUF76145P3, HUF76145S3S Rev. B
Absolute Maximum Ratings
T
C
=
25
o
C
,
Unless Otherwise Specified
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
30
30
±
16
75
75
75
Figure 4
Figure 6
270
2.17
-40 to 150
A
A
A
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 25V, V
GS
= 0V
-
-
1
μ
A
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figures 9, 10)
-
0.0035
0.0045
I
D
= 75A, V
GS
= 5V (Figure 9)
-
0.0043
0.0058
I
D
= 75A, V
GS
= 4.5V (Figure 9)
-
0.0046
0.0065
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
(Figure 3)
-
-
0.46
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-220 and TO-263
-
-
62
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
75A,
R
L
= 0.20
, V
GS
=
4.5V,
R
GS
= 2.5
(Figure 15)
-
-
255
ns
Turn-On Delay Time
t
d(ON)
-
26
-
ns
Rise Time
t
r
-
145
-
ns
Turn-Off Delay Time
t
d(OFF)
-
35
-
ns
Fall Time
t
f
-
39
-
ns
Turn-Off Time
t
OFF
-
-
110
ns
HUF76145P3, HUF76145S3S
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