參數(shù)資料
型號： HUF76113SK8
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 6.5 A, 30 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： MS-012AA, 8 PIN
文件頁數(shù)： 3/11頁
文件大?。?/td> 384K
代理商： HUF76113SK8
3
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
6.5A, R
L
= 2.31
,
V
GS
=
10V, R
GS
= 16
(Figure 16)
-
-
59
ns
Turn-On Delay Time
t
d(ON)
-
6.5
-
ns
Rise Time
t
r
-
33
-
ns
Turn-Off Delay Time
t
d(OFF)
-
45
-
ns
Fall Time
t
f
-
40
-
ns
Turn-Off Time
t
OFF
-
-
126
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V, I
D
2.0A,
R
L
= 7.5
I
g(REF)
= 1.0mA
(Figures 14)
-
17.5
21
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
10
12
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.65
0.78
nC
Gate to Source Gate Charge
Q
gs
-
1.10
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
5.40
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 13)
-
585
-
pF
Output Capacitance
C
OSS
-
327
-
pF
Reverse Transfer Capacitance
C
RSS
-
73
-
pF
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
=6.5A
-
-
1.25
V
I
SD
= 2.0A
1.10
V
Reverse Recovery Time
t
rr
I
SD
= 2.0A, dI
SD
/dt = 100A/
μ
s
-
-
47
ns
Reverse Recovered Charge
Q
RR
I
SD
= 2.0A, dI
SD
/dt = 100A/
μ
s
-
-
52
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
4
0
25
50
75
100
125
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
8
150
2
6
V
GS
= 4.5V, R
θ
JA
= 177
o
C/W
V
GS
= 10V, R
θ
JA
= 50
o
C/W
HUF76113SK8
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HUF76113T3ST 功能描述:MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.023Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3ST 功能描述:MOSFET USE 512-FDD6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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