參數(shù)資料
型號(hào)： HUF76113SK8
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 6.5 A, 30 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： MS-012AA, 8 PIN
文件頁(yè)數(shù)： 11/11頁(yè)
文件大?。?/td> 384K
代理商： HUF76113SK8
11
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
SPICE Thermal Model
(0.76 in
2
footprint)
REV 3 June 1998
HUF76113SK8
CTHERM1 th 6 3.75e-4
CTHERM2 6 5 3.05e-3
CTHERM3 5 4 3.70e-2
CTHERM4 4 3 2.52e-2
CTHERM5 3 2 8.50e-2
CTHERM6 2 tl 7.95e-1
RTHERM1 th 6 3.95e-2
RTHERM2 6 5 2.50e-1
RTHERM3 5 4 4.00e-1
RTHERM4 4 3 6.35
RTHERM5 3 2 2.02e1
RTHERM6 2 tl 4.80e1
SABER Thermal Model
(0.76 in
2
footprint)
SABER thermal model HUF76113SK8
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 3.75e-4
ctherm.ctherm2 6 5 = 3.05e-3
ctherm.ctherm3 5 4 = 3.70e-2
ctherm.ctherm4 4 3 = 2.52e-2
ctherm.ctherm5 3 2 = 8.50e-2
ctherm.ctherm6 2 tl = 7.95e-1
rtherm.rtherm1 th 6 = 3.95e-2
rtherm.rtherm2 6 5 = 2.50e-1
rtherm.rtherm3 5 4 = 4.00e-1
rtherm.rtherm4 4 3 = 6.35
rtherm.rtherm5 3 2 = 2.02e1
rtherm.rtherm6 2 tl = 4.80e1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF76113SK8
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76113SK8T 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113T3ST 功能描述:MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.023Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3ST 功能描述:MOSFET USE 512-FDD6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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