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參數(shù)資料
| 型號(hào)： | HUF76113DK8 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 6 A, 30 V, 0.041 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 210K |
| 代理商： | HUF76113DK8 |
8
Thermal resistances corresponding to other copper areas can
be obtained from Figure 23 or by calculation using Equation 2.
R
θ
JA
is defined as the natural log of the area times a cofficient
added to a constant. The area, in square inches is the top
copper area including the gate and source pads.
ln
×
–
=
While Equation 2 describes the thermal resistance of a
single die, several of the new UltraFETs are offered with two
die in the SOP-8 package. The dual die SOP-8 package
introduces an additional thermal component, thermal
coupling resistance,
R
θβ
. Equation 3 describes
R
θβ
as a
function of the top copper mounting pad area.
R
θβ
46.4
21.7
Area
ln
–
=
The thermal coupling resistance vs. copper area is also
graphically depicted in Figure 23. It is important to note the
thermal resistance (R
θ
JA
) and thermal coupling resistance
(
R
θβ
) are equivalent for both die. For example at 0.1 square
inches of copper:
R
θ
JA1
= R
θ
JA2
= 159
o
C/W
R
θβ
1
=
R
θβ
2
= 97
o
C/W
T
J1
and T
J2
define the junction temerature of the respective
die. Similarly, P
1
and P
2
define the power dissipated in each
die. The steady state junction temperature can be calculated
using Equation 4 for die 1and Equation 5 for die 2.
Example: To calculate the junction temperature of each die
when die 2 is dissipating 0.5 Watts and die 1 is dissipating 0
Watts. The ambient temperature is 70C and the package is
mounted to a top copper area of 0.1 square inches per die.
Use Equation 4 to calulate T
J1
and and Equation 5 to
calulate T
J2
..
P2
R
θβ
T
J1
= (0 Watts)(159C/W) + (0.5 Watts)(97C/W) + 70C
T
J1
= 119C
P1
R
θβ
T
J2
= (0.5 Watts)(159
o
C/W) + (0 Watts)(97
o
C/W) + 70
o
C
T
J2
= 150
o
C
The transient thermal impedance (Z
θ
JA
) is also effected by
varied top copper board area. Figure 24 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package. Therefore,
CTHERM1 through CTHERM5 and RTHERM1 through
RTHERM5 remain constant for each of the thermal models. A
listing of the model component values is available in Table 1.
(EQ. 2)
R
θ
JA
103.2
24.3
Area
(
)
0
0.001
50
100
150
200
250
300
0.01
0.1
1
R
θ
,
θ
J
(
o
C
AREA, TOP COPPER AREA (in
2
) PER DIE
FIGURE 23. THERMAL RESISTANCE vs MOUNTING PAD AREA
191
o
C/W - 0.027in
2
228
o
C/W - 0.006in
2
R
θ
JA
= 103.2 - 24.3
*
ln
(AREA)
R
θβ
= 46.4 - 21.7
*
ln
(AREA)
(EQ. 3)
(
)
×
(EQ. 4)
TJ1
P1R
θ
JA
TA
+
+
=
(EQ. 5)
TJ2
P2R
θ
JA
TA
+
+
=
0
40
80
120
160
10
-1
10
0
10
1
10
2
10
3
FIGURE 24. THERMAL RESISTANCE vs MOUNTING PAD AREA
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
I
o
C
COPPER BOARD AREA - DESCENDING ORDER
0.020 in
0.140 in
2
0.257 in
2
0.380 in
2
0.493 in
2
HUF76113DK8
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| HUF76113DK8T | 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113SK8 | 功能描述:MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113SK8T | 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113T3ST | 功能描述:MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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