參數(shù)資料
型號(hào)： HUF76113DK8
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管)
中文描述： 6 A, 30 V, 0.041 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 210K
代理商： HUF76113DK8
3
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
6A, R
L
= 2.5
, V
GS
=
10V,
R
GS
= 18
(Figure 16)
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
6.5
-
ns
Rise Time
t
r
-
33
-
ns
Turn-Off Delay Time
t
d(OFF)
-
50
-
ns
Fall Time
t
f
-
40
-
ns
Turn-Off Time
t
OFF
-
-
135
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V, I
D
1.8A,
R
L
= 8.3
I
g(REF)
= 1.0mA
(Figure 14)
-
16.0
19.2
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
8.4
10.2
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.55
0.66
nC
Gate to Source Gate Charge
Q
gs
-
1.50
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
3.90
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
605
-
pF
Output Capacitance
C
OSS
-
275
-
pF
Reverse Transfer Capacitance
C
RSS
-
40
-
pF
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 6A
-
-
1.25
V
I
SD
= 1.8A
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 1.8A, dI
SD
/dt = 100A/
μ
s
-
-
40
ns
Reverse Recovered Charge
Q
RR
I
SD
= 1.8A, dI
SD
/dt = 100A/
μ
s
-
-
42
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
1
2
3
4
5
7
25
50
75
100
125
150
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= 4.5V, R
θ
JA
= 228
o
C/W
V
GS
= 10V, R
θ
JA
= 50
o
C/W
6
HUF76113DK8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76113DK8T 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113SK8 功能描述:MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113SK8T 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113T3ST 功能描述:MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.023Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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