參數(shù)資料
型號： HUF76113DK8
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
中文描述： 6 A, 30 V, 0.041 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 10/12頁
文件大?。?/td> 210K
代理商： HUF76113DK8
10
SABER Electrical Model
REV July 1998
template huf76113 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 8.35e-13, cjo = 9.11e-10, tt = 2.14e-8, m = 0.42)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 3.76e-10, is = 1e-30, n = 10, m = 0.68)
m..model mmedmod = (type=_n, vto = 2.03, kp = 3.75, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 2.36, kp = 50, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.77, kp = 0.1, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.05, voff = -2)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2, voff = -6.05)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 0.6)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.6, voff = 0)
c.ca n12 n8 = 8.5e-10
c.cb n15 n14 = 8.05e-10
c.cin n6 n8 = 5.71e-10
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 9.67e-10
l.lsource n3 n7 = 3.27e-10
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1e-3, tc2 = 1e-7
res.rdbody n71 n5 = 1.39e-2, tc1 = 1.03e-3, tc2 = 6.85e-6
res.rdbreak n72 n5 = 8.21e-2, tc1 = 2.25e-3, tc2 = 4.14e-5
res.rdrain n50 n16 = 3.04e-3, tc1 = 3.67e-2, tc2 = 4.11e-5
res.rgate n9 n20 = 2.65
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 9.67
res.rlsource n3 n7 = 3.27
res.rslc1 n5 n51 = 1e-6, tc1 = 2.26e-3, tc2 = 1.23e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 25e-3, tc1 = 0, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -7.41e-4, tc2 = 9.41e-7
res.rvthres n22 n8 = 1, tc1 = -2.97e-3, tc2 = -5.91e-6
spe.ebreak n11 n7 n17 n18 = 38.7
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/256))** 2))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
RDBODY
RDBREAK
72
71
HUF76113DK8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76113DK8T 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113SK8 功能描述:MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113SK8T 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113T3ST 功能描述:MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.023Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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