- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385408 > HUF75329D3 (HARRIS SEMICONDUCTOR) 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.026 Ω,N溝道,UltraFET功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | HUF75329D3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.026 Ω,N溝道,UltraFET功率MOS場效應(yīng)管) |
| 中文描述： | 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 127K |
| 代理商： | HUF75329D3 |
84
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
SPICE Thermal Model
REV 23 February 1999
HUF75329D
CTHERM1 th 6 2.80e-3
CTHERM2 6 5 1.00e-2
CTHERM3 5 4 6.80e-3
CTHERM4 4 3 7.00e-3
CTHERM5 3 2 1.60e-2
CTHERM6 2 tl 15.55
RTHERM1 th 6 7.94e-3
RTHERM2 6 5 1.98e-2
RTHERM3 5 4 5.57e-2
RTHERM4 4 3 3.13e-1
RTHERM5 3 2 4.71e-1
RTHERM6 2 tl 6.26e-2
SABER Thermal Model
SABER thermal model HUF75329D
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.80e-3
ctherm.ctherm2 6 5 = 1.00e-2
ctherm.ctherm3 5 4 = 6.80e-3
ctherm.ctherm4 4 3 = 7.00e-3
ctherm.ctherm5 3 2 = 1.60e-2
ctherm.ctherm6 2 tl = 15.55
rtherm.rtherm1 th 6 = 7.94e-3
rtherm.rtherm2 6 5 = 1.98e-2
rtherm.rtherm3 5 4 = 5.57e-2
rtherm.rtherm4 4 3 = 3.13e-1
rtherm.rtherm5 3 2 = 4.71e-1
rtherm.rtherm6 2 tl = 6.26e-2
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF75329D3, HUF75329D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75337G3 | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| HUF75337P3 | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| HUF75337S3S | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| HUF75829D3 | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF75829D3S | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75329D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75329D3S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75329D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75329D3ST | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor |
| HUF75329D3ST_R4820 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。