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參數(shù)資料
型號(hào): HUF75329D3
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.026 Ω,N溝道,UltraFET功率MOS場效應(yīng)管)
中文描述: 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù): 6/9頁
文件大?。?/td> 127K
代理商: HUF75329D3
81
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORM
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
Q
gs
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
0
0
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
HUF75329D3, HUF75329D3S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75329D3S 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75329D3S 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
HUF75329D3ST 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75329D3ST 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor
HUF75329D3ST_R4820 制造商:Fairchild Semiconductor Corporation 功能描述: