參數(shù)資料
型號: HUF75329D3
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.026 Ω,N溝道,UltraFET功率MOS場效應(yīng)管)
中文描述: 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù): 5/9頁
文件大?。?/td> 127K
代理商: HUF75329D3
80
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 20A
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
0.4
0.9
1.0
1.1
1.2
-40
0
40
80
120
160
200
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
0.8
1200
600
00
10
20
30
40
50
C
900
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
300
C
ISS
C
OSS
C
RSS
60
1500
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
10
8
6
4
0
V
G
,
V
DD
= 30V
2
15
20
35
0
Q
g
, GATE CHARGE (nC)
5
10
I
D
= 20A
I
D
= 12.5A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
25
30
HUF75329D3, HUF75329D3S
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