Pin Description
Pin Name
I/O
ROM Code
Option
Description
PA0~PA7
I/O
Pull-high
Pull-low
Wake-up
CMOS/NMOS/PMOS
Bidirectional 8-bit input/output port. Each bit can be configured as a
wake-up input by ROM code option. The input or output mode is con-
trolled by PAC (PA control register).
Pull-high resistor options: PA0~PA7
Pull-low resistor options: PA0~PA3
CMOS/NMOS/PMOS options: PA0~PA7
Falling edge wake-up options: PA0~PA1, PA4~PA7
Rising and falling edge wake-up options: PA2~PA3
PB0~PB3
PB4/SDA
PB5~PB6
PB7/SCL
I/O
Pull-high
Pull-low
Wake-up
Bidirectional 8-bit input/output port. Software instructions determine the
CMOSoutputorSchmitttriggerinputwithpull-highresistor(determined
by pull-high options).
PB4 is wire-bonded with the SDA pad of the Data EEPROM.
PB7 is wire-bonded with the SCL pad of the Data EEPROM.
Pull-high resistor options: PB0~PB7
Pull-low resistor for options: PB2, PB3
Falling edge wake-up options: PB4/SDA, PB7/SCL
PC0~PC3
I/O
Pull-high
Bidirectional 8-bit input/output port. Software instructions determine the
CMOSoutputorSchmitttriggerinputwithpull-highresistor(determined
by pull-high options).
Pull-high resistor options: PC0~PC3
VSS
Negative power supply, ground
RES
I
Schmitt trigger reset input. Active low.
VDD
Positive power supply
V33O
O
3.3V regulator output
USBD+/CLK
I/O
USBD+ or PS2 CLK I/O line
USB or PS2 function is controlled by software control register
USBD-/DATA
I/O
USBD- or PS2 DATA I/O line
USB or PS2 function is controlled by software control register
OSCI
OSCO
I
O
OSCI,OSCOareconnectedtoa6MHzor12MHzcrystal/resonator(de-
termined by software instructions) for the internal system clock.
Absolute Maximum Ratings
Supply Voltage...........................V
SS
0.3V to V
SS
+6.0V
Storage Temperature............................ 50 C to 125 C
Input Voltage..............................V
SS
0.3V to V
DD
+0.3V
Operating Temperature...............................0 C to 70 C
I
OL
Total ..............................................................150mA
I
OH
Total............................................................ 100mA
Total Power Dissipation.....................................500mW
Note: These are stress ratings only. Stresses exceeding the range specified under Absolute Maximum Ratings may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed
in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
HT82M9BEE/HT82M9BAE
Rev. 1.20
3
August 13, 2007