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參數(shù)資料
| 型號： | HT1MOA2S30 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | HITAG 1 transponder IC |
| 封裝： | HT1ICS3002W/V6F<Uncased die|<<<1<Always Pb-free,;HT1ICS3002W/V6F<Uncased die|<<<1<Always Pb-free,;HT1MOA2S30/E/3<SOT500|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 75K |
| 代理商： | HT1MOA2S30 |
HT1X_SDS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.0 — 16 September 2011
210530
5 of 9
NXP Semiconductors
HT1x
HITAG 1 transponder IC
8. Limiting values
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
9. Abbreviations
Table 5.
Acronym
AC
CRC
EEPROM
IC
RF
RWD
Table 3.
Symbol
V
DD
V
ESD
Limiting values - HT1ICS3002W/V6F
[1]
Parameter
supply voltage
electrostatic discharge voltage
Conditions
Min
0.5
2
Max
6.5
-
Unit
V
kV
MIL-STD 883D, Method
3015.7, Human Body
MIL-STD 883D, Method 3023
IN1-IN2
I
lu
I
i(max)
T
j
latch-up current
maximum input current
junction temperature
100
-
55
-
30
+140
mA
mA
C
Table 4.
Symbol
T
stg
T
amb
Limiting values - HT1MOA2S30/E/3
[1]
Parameter
storage temperature
ambient temperature
Conditions
Min
55
25
Max
+125
+85
Unit
C
C
R
th(j-a)
30 K/W @ I
in
= 30 mA
Abbreviations
Description
AntiCollision
Cyclic Redundancy Check
Electrically Erasable Programmable Read-Only Memory
Integrated Circuit
Radio Frequency
Read Write Device
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| HT1MOA2S30/E/3,118 | 功能描述:RFID應(yīng)答器 HITAG 1 MOA2 MODULE RoHS:否 制造商:Murata 存儲容量:512 bit 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| HT1MOA3S30 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HITAGTM1 Chip Module |
| HT1MOA3S30/E/1 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HITAGTM1 Chip Module |
| HT1MOA3S30/E/3 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HITAGTM1 Chip Module |
| HT1TA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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