參數(shù)資料
型號: HSDL-3203
廠商: Avago Technologies Ltd.
英文描述: Small Profile Package IrDA㈢ Data Compliant Low Power 115.2 kbit/s Infrared Transceiver
中文描述: 小資料包的IrDA㈢數(shù)據(jù)兼容低功耗115.2 kbit / s的紅外收發(fā)器
文件頁數(shù): 5/19頁
文件大小: 413K
代理商: HSDL-3203
5
Electrical and Optical Specifications
Specifications hold over the recommended operating conditions unless otherwise noted. Unspecified test conditions
can be anywhere in their operating range. All typical values are at 25C and 3.0 V unless otherwise noted.
Parameter
Symbol Min.
Typ. Max. Units
Receiver
RXD Output Voltage
Logic Low
V
OL
0
Logic High V
OH
V
CC
–0.2
Viewing Angle
2
φ
1/2
30
Logic High Receiver Input
EI
H
0.0081
Irradiance
Logic Low Receiver Input
EI
L
Irradiance
Peak Sensitivity Wavelength
λ
p
880
RXD Pulse Width
tpw
1.5
2.5
RXD Rise and Fall Times
t
r
, t
f
25
Receiver Latency Time
t
L
25
Receiver Wake Up Time
t
W
50
Transmitter
Radiant Intensity
EI
H
4
8
Conditions
Note
0.4
V
CC
V
V
I
OL
= 200
μ
A, for in-band EI
I
OH
= 200
μ
A, for in-band
EI
0.3
μ
W/cm
2
14
mW/cm
2
For in-band signals
115.2 kbit/s
500
13
0.3
μ
W/cm
2
For in-band signals
13
nm
μ
s
ns
μ
s
μ
s
4.0
100
50
100
14
tpw(EI) = 1.6
μ
s, C
L
= 10 pF
14
15
28.8
mW/sr
I
LEDA
= 50 mA, T
A
= 25C,
θ
1/2
15
I
LEDA
= 250 mA, T
A
= 25C,
θ
1/2
15
22.5
mW/sr
Peak Wavelength
Spectral Line Half Width
Viewing Angle
Optical Pulse Width
Optical Rise and Fall Times
λ
p
λ
1/2
2
θ
1/2
tpw
tr (EI)
tf (EI)
tpw
(max)
V
ON
(LEDA)
I
LK
(LEDA)
875
35
nm
nm
μ
s
ns
30
1.5
60
2
600
1.6
tpw(TXD) = 1.6
μ
s
tpw(TXD) = 1.6
μ
s
Maximum Optical Pulse Width
20
50
μ
s
TXD pin stuck high
LED Anode ON State Voltage
1.5
V
I
LEDA
= 50 mA,
V
IH
(TXD) = 2.7 V
V
LEDA
= V
CC
= 3.6 V,
V
I
(TXD)
1/3 V
CC
LED Anode OFF State Leakage
0.01
1.0
μ
A
Transceiver
TXD and SD Input
Currents
Logic Low
Logic High I
H
Shutdown
Idle
I
L
–1
–0.01 1
0.01
10
2.5
μ
A
μ
A
nA
mA
0
V
I
1/3 V
CC
V
I
2/3 V
CC
V
CC
= 3.6 V, V
SD
V
CC
–0.5
V
CC
= 3.6 V, V
I
(TXD)
1/3 V
CC
,
EI = 0
V
CC
= 3.6 V, V
I
(TXD)
1/3 V
CC
1
200
4
Supply Current
I
CCI
I
CC2
Active
Receiver
I
CC3
2.6
5
mA
16
Notes:
14. For in-band signals
115.2 kbit/s where 8.1
μ
W/cm
2
EI
500 mW/cm
2
.
15. Wake up time is measured from SD pin HIGH to LOW transition or V
CC
power ON to valid RXD output.
16. Typical value is at EI = 10 mW/cm
2
, maximum value is at EI = 500 mW/cm
2
.
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