參數(shù)資料
型號(hào)： HSB1109
廠商： HSMC CORP.
英文描述： SLIM-MOX104,5 MEG,1%
中文描述： 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 33K
代理商： HSB1109
HI-SINCERITY
MICROELECTRONICS CORP.
HSB1109
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6607
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 1/3
HSB1109
HSMC Product Specification
Features
Low frequency high voltage amplifier
Complementary pair with HSD1609
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).................................................................................. 1.25 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -160 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current....................................................................................................... -100 mA
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-160
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
5.5
Max.
-
-
-
-10
-2
-1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-140V
IC=-30mA, IB=-3mA
IC=-10mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
B
C
D
60-120
100-200
160-320
TO-126ML
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