參數(shù)資料
型號(hào)： HS1-82C55ARH
廠商： Intersil Corporation
英文描述： Radiation Hardened CMOS Programmable Peripheral Interface
中文描述： 輻射加固CMOS可編程外設(shè)接口
文件頁數(shù)： 3/23頁
文件大小： 165K
代理商： HS1-82C55ARH
972
Specifications HS-82C55ARH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . . .VSS-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25.0mW/C
θ
JA
θ
JC
6
o
C/W
40
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . VDD -1.5V to VDD
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUP
TEMPERATURE
LIMITS
UNITS
MIN
MAX
TTL Output High Voltage
VOH1
VDD = 4.5V, IO = -2.5mA,
VIN = 0V, 4.5V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
3.0
-
V
CMOS Output High Volt-
age
VOH2
VDD = 4.5V, IO = -100
μ
A,
VIN = 0V, 4.5V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
VDD-
0.4
-
V
Output Low Voltage
VOL
VDD = 4.5V, IO = 2.5mA,
VIN = 0V, 4.5V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
0.4
V
Input Leakage Current
IIL or IIH
VDD = 5.5V, VIN = 0V, 5.5V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-1.0
1.0
μ
A
Output Leakage Current
IOZL or
IOZH
VDD = 5.5V, VIN = 0V, 5.5V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-10
10
μ
A
Input Current Bus Hold
High
IBHH
VDD = 4.5V or 5.5V,
VIN = 3.0V (See Note 1)
Ports A, B, C
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-800
-60
μ
A
Input Current Bus Hold
Low
IBHL
VDD = 4.5V or 5.5V,
VIN = 1.0V (See Note 2)
Port A
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
60
800
μ
A
Standby Power Supply
Current
IDDSB
VDD = 5.5V, IO = 0mA,
VIN =GND or VDD
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
20
μ
A
Darlington Drive Voltage
VDAR
VDD = 4.5V, IO = -2.0mA,
VIN = GND or VDD
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
3.9
-
V
Functional Tests
FT
VDD = 4.5V and 5.5V,
VIN = GND or VDD,
f = 1MHz
7, 8A, 8B
-55
o
C, +25
o
C,
+125
o
C
-
-
-
Noise Immunity Functional
Test (Note 4)
FN
VDD = 5.5V, VIN = GND or
VDD - 1.5V and
VDD = 4.5V, VIN = 0.8V or
VDD
7, 8A, 8B
-55
o
C, +25
o
C,
+125
o
C
-
-
-
NOTES:
1. IBHH should be measured after raising VIN and then lowering to 3.0V.
2. IBHL should be measured after lowering VIN to VSS and then raising to 0.8V.
3. No internal current limiting exists on the Port Outputs. A resistor must be added externally to limit the current.
4. For VIH (VDD = 5.5V) and VIL (VDD = 4.5V) each of the following groups is tested separately with all other inputs using VIH = 2.6V,
VIL = 0.4V: PA, PB, PC, Control Pins (Pins 5, 6, 8, 9, 35, 36).
Spec Number
518060
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