參數(shù)資料
型號： HS1-81C56RH
廠商： HARRIS SEMICONDUCTOR
元件分類： DRAM
英文描述： Radiation Hardened 256 x 8 CMOS RAM
中文描述： 256 X 8 MULTI-PORT SRAM, 250 ns, CDIP40
文件頁數(shù)： 5/14頁
文件大?。?/td> 86K
代理商： HS1-81C56RH
5
Specifications HS-81C55RH, HS-81C56RH
WRITE to Port Output
TWP
Notes 1, 4
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-55
o
C
≤
T
A
≤
+125
o
C
-
300
ns
Port Input Setup Time
TPR
Notes 1, 4
9, 10, 11
50
-
ns
Port Input Hold Time
TRP
Notes 1, 4
9, 10, 11
15
-
ns
Strobe to Buffer Full
TSBF
Notes 1, 4
9, 10, 11
-
300
ns
Strobe Width
TSS
Notes 1, 4
9, 10, 11
150
-
ns
READ to Buffer Empty
TRBE
Notes 1, 4
9, 10, 11
-
300
ns
Strobe to INTR Off
TSI
Notes 1, 4
9, 10, 11
-
300
ns
READ to INTR Off
TRDI
Notes 1, 4
9, 10, 11
360
ns
Port Setup Time to Strobe
TPSS
Notes 1, 4, 5
9, 10, 11
100
-
ns
Post Hold Time After Strobe
TPHS
Notes 1, 4
9, 10, 11
100
-
ns
Strobe to Buffer Empty
TSBE
Notes 1, 4
9, 10, 11
-
300
ns
WRITE to Buffer full
TWBF
Notes 1, 4
9, 10, 11
-
300
ns
WRITE to INTR Off
TWI
Notes 1, 4
9, 10, 11
-
340
ns
TIMER-IN to TIMER OUT Low
TTL
Notes 1, 4
9, 10, 11
-
300
ns
TIMER-IN to TIMER-OUT High
TTH
Notes 1, 4
9, 10, 11
-
300
ns
Data Bus Enable from READ Control
TRDE
Notes 1, 4
9, 10, 11
120
-
ns
TIMER-IN Low Time
T1
Notes 1, 4, 6
9, 10, 11
40
-
ns
TIMER-IN High Time
T2
Notes 1, 4
9, 10, 11
115
-
ns
NOTES:
1. All devices guaranteed at worst case limits and over radiation.
2. Operating supply current (IDDOP) is proportional to operating frequency.
3. Output timings are measured with purely capacitive load.
4. For design purposes the limits are given as shown. For compatibility with the 80C85RH microprocessor, the AC parameters are tested
as maximums.
5. Parameter tested as part of the functional test. No read and record data available.
6. At low temperature, T1 is measured down to 10ns. If the reading is less than 10ns, the parameter will read 10ns.
7. Read and Record data available on failing data only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CIN
VDD = Open, f = 1MHz, All measurements
referenced to device ground
T
A
= +25
o
C
-
10
pF
I/O Capacitance
CI/O
VDD = Open, f = 1MHz, All measurements
referenced to device ground
T
A
= +25
o
C
-
12
pF
Output Capacitance
COUT
VDD = Open, f = 1MHz, All measurements
referenced to device ground
T
A
= +25
o
C
-
10
pF
Data Bus Float After
READ
TRDF
VDD = 4.75V
-55
o
C, +25
o
C,
+125
o
C
10
100
ns
Recovery Time Between
Controls
TRV
VDD = 4.75V
-55
o
C, +25
o
C,
+125
o
C
-
220
ns
NOTE: The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
518056
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