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826
Specifications HS-65647RH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Typical Derating Factor. . . . . . . . . . . . 3mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
28 Lead SBDIP Package. . . . . . . . . . . . .
28/36 Lead Ceramic Flatpack Package. .
Maximum Package Power Dissipation at +125
o
C Ambient
28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W
28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . . . . . 0.94W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . .22.2mW/C
28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . .18.7mW/C
θ
JA
θ
JC
45
o
C/W
53.4
o
C/W
8.0
o
C/W
7.4
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range (VDD) . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . . . . . 0V to +0.2VDD
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . .0.8VDD to VDD
Data Retention Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . .40ns Max.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
High Level Output
Voltage
VOH
VDD = 4.5V, IO = -5mA
VI = VDD or GND
1, 2, 3
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
VDD-
0.4
-
V
Low Level Output
Voltage
VOL
VDD = 4.5V, IO = 8.0mA
VI = VDD or GND
1, 2, 3
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
-
0.4
V
High Impedance Output
Leakage Current
IOZL or
IOZH
VDD = 5.5V, VO = GND or
VDD, VI = VDD or GND
E1 = VDD, E2 = 0V
1, 3
-55
o
C, +25
o
C
-10
10
μ
A
2
+85
o
C
-30
30
μ
A
2
+125
o
C
-60
60
μ
A
Input Leakage Current
IIH or IIL
VDD = 5.5V, VI = VDD or
GND
1, 2, 3
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
-1.0
1.0
μ
A
Standby Supply Current
IDDSB
(Note 3)
VDD = 5.5V, IO = 0mA,
VI = VDD or GND
E1 = VDD, E2 = 0V
1, 3
-55
o
C, +25
o
C
-
500
μ
A
2
+85
o
C
-
4
mA
2
+125
o
C
-
10
mA
Enable Supply Current
IDDEN
VDD = 5.5V, IO = 0mA,
VI = VDD or GND
E1 = 0.0V, E2 = VDD
3
-55
o
C
-
77
mA
1
+25
o
C
-
73
mA
2
+85
o
C, +125
o
C
-
64
mA
Operating Supply
Current (Note 2)
IDDOP
VDD = 5.5V, IO = 0mA,
VI = VDD or GND,
E2 = VDD, E1 = 0V,
f = 2MHz
3
-55
o
C
-
100
mA
1
+25
o
C
-
86
mA
2
+85
o
C, +125
o
C
-
75
mA
Data Retention Supply
Current
IDDDR
VDD = 2.0V, IO = 0mA,
VI = VDD or GND
E1 = VDD, E2 = 0V
1, 3
-55
o
C, +25
o
C
-
50
μ
A
2
+85
o
C
-
1
mA
2
+125
o
C
-
4
mA
Functional Tests
FT
VDD = 4.5V and 5.5V
VI = VDD or GND, f = 1MHz
7, 8A, 8B
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
-
-
-
Noise Immunity
Functional Test
FN
VDD = 4.5, VIL = 0.2 VDD
VIH = 0.8 VDD, f = 1MHz
7, 8A, 8B
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)
3. In order for this device to be in low power standby mode. E2 must be disabled (low).
Spec Number
518729