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參數(shù)資料
| 型號(hào)： | HS-65647RH |
| 廠商： | Intersil Corporation |
| 英文描述： | RF CONNECTORSMP MALE; REAR MOUNT; BULKHEAD; 0.085 COAX |
| 中文描述： | 輻射加固8K的× 8 SOS救援中心的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 13/16頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | HS-65647RH |
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836
HS-65647RH
Irradiation Circuit
HS-65647RH (8K x 8 TSOS4 SRAM) 28 LEAD CERAMIC DIP
NOTES:
1. VDD = 5.5V
±
0.5V
R = 10k
±
10%
2. Group E sample size is two die/wafer.
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
NC
VDD
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VDD
E2
A8
A9
A11
A10
DQ7
DQ6
DQ5
DQ4
DQ3
W
G
E1
Test Patterns
MARCH (II)PATTERN
After a background of zeros is written, each cell (from begin-
ning to end in sequence) is read, written to a one and
reread. When the array is full of ones each cell (from the end
to the beginning) is read, restored to a zero and reread.
After this the pattern is repeated but with complemented
data.
MASEST PATTERN (Multiple Address Select Pattern)
A checkerboard pattern is written into the memory. Then the
first cell is read, then its binary address complement is read.
The second cell is read and then its binary address comple-
ment is read. This pattern of incrementing the address and
then reading its binary address complement is repeated until
the entire memory is read.
This is then repeated but using a checkerboard bar pattern.
GALROW PATTERN (Row Galloping Pattern)
After a background of zeros is written into the memory a one
is written into the first cell. It is then read alternately with
each other cell in the row. The test cell is then rewritten back
to a zero. The test cell is then incremented and the
sequence is repeated until all cells in the memory have been
used as a test cell.
This is pattern then repeated but using complemented data.
GALCOL PATTERN (Column Galloping Pattern)
After a background of zeros is written into the memory a one
is written into the first cell. It is then read alternately with
each other cell in the column. The test cell is then rewritten
back to a zero. The test cell is then incremented and the
sequence is repeated until all cells in the memory have been
used as a test cell.
This is pattern then repeated but using complemented data.
CHECKERBOARD PATTERN and CHECKERBOARD
BAR
A checkerboard is written (101010) into the memory and
then the pattern is read back. This is then repeated but using
complemented data.
Spec Number
518729
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HS1-65647RH | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS9-65647RH | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS9A-65647RH-Q | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS1-65647RH-Q | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS9-65647RH-Q | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HS-65647RH_00 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS-6564RH | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8, 16K x 4 CMOS RAM Module |
| HS-65M2-F2 | 功能描述:KIT HEATSINK EMETXE-I65 I67 I77 制造商:arbor solution inc. 系列:- 零件狀態(tài):停產(chǎn) 配件類型:散熱片 規(guī)格:95mm x 95mm x 11mm 標(biāo)準(zhǔn)包裝:1 |
| HS66 | 制造商:Richco 功能描述:Hexagon plastic spacer,19.1mm Lx2.8mm ID |
| HS-6-6 | 功能描述:HEX SPACER FOR #6 SCREW 3/4" RoHS:是 類別:硬件，緊固件，配件 >> 電路板襯墊，支座 系列:HS 標(biāo)準(zhǔn)包裝:100 系列:- 類型:圓形，無(wú)螺紋，母形/母形 尺寸:0.250"（6.35mm）1/4" 外徑 螺紋/螺釘/孔尺寸:#4，0.120"（3.05mm）內(nèi)徑 長(zhǎng)度 - 總體:1.000"（25.40mm） 材質(zhì):酚醛塑料 顏色:自然色 鍍層:- 板間高度:1.000"（25.40mm）1" 其它名稱:364K |
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