參數(shù)資料
型號： HN7G06FU
廠商： Toshiba Corporation
英文描述： Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
中文描述： 電源管理開關應用，逆變電路的應用，驅(qū)動電路的應用和接口電路的應用
文件頁數(shù)： 2/6頁
文件大小： 236K
代理商： HN7G06FU
HN7G06FU
2007-11-01
2
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
15 V, I
E
=
0
100
nA
Emitter cutoff current
I
EBO
V
EB
=
5 V, I
C
=
0
100
nA
DC current gain
h
FE
**
V
CE
=
2 V, I
C
=
10 mA
300
1000
V
CE (sat)(1)
I
C
=
10 mA, I
B
=
0.5 mA
15
30
Collector-emitter saturation voltage
V
CE (sat)(2)
I
C
=
200 mA, I
B
=
10 mA
110
250
mV
Base-emitter saturation voltage
V
BE (sat)
I
C
=
200 mA, I
B
=
10 mA
0.87
1.2
V
Transition frequency
f
T
V
CE
=
2 V, I
C
=
10 mA
130
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0,
f
=
1 MHz
4.2
pF
Turn-on time
t
on
40
ns
Storage time
t
stg
280
ns
Switching time
Fall time
t
f
65
ns
**: h
FE
Classification A:300~600, B:500~1000
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
=
50 V, I
E
=
0
100
nA
Collector cutoff current
I
CEO
V
CE
=
50 V, I
E
=
0
500
nA
Emitter cutoff current
I
EBO
V
EB
=
10 V, I
C
=
0
0.082
0.15
mA
DC current gain
h
FE
V
CE
=
5 V, I
C
=
10 mA
80
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
5 mA, I
B
=
0.25 mA
0.1
0.3
V
Input voltage (ON)
V
I(ON)
V
CE
=
0.2 V, I
C
=
5 mA
1.5
5.0
V
Input voltage (OFF)
V
I(OFF)
V
CE
=
5 V, I
C
=
0.1 mA
1.0
1.5
V
Transition frequency
f
T
V
CE
=
10 V, I
C
=
5 mA
250
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
3
pF
Input resistor
R1
32.9
47
61.1
k
Ω
Resistor ratio
R1/R2
0.9
1.0
1.1
5
Ω
6
Ω
OUTPUT
6
Ω
300
Ω
V
CC
=
6 V
V
BB
=
3 V
INPUT
0 V
10
μ
s
Duty cycle
<
2%
IB1
=
IB2
=
5 mA
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相關代理商/技術參數(shù)
參數(shù)描述
HN7G06FU-A(TE85L,F 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V 47K x 47Kohms RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G07FU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
HN7G08FE 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:General-Purpose Amplifier Applications
HN7G08FE-A 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G08FE-A(TE85L,F 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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