參數(shù)資料
型號(hào)： HN7G07FU
廠商： Toshiba Corporation
英文描述： Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
中文描述： 電源管理開(kāi)關(guān)應(yīng)用，逆變電路的應(yīng)用，驅(qū)動(dòng)電路的應(yīng)用和接口電路的應(yīng)用
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 239K
代理商： HN7G07FU
HN7G07FU
2007-11-01
1
TOSHIBA Multichip Discrete Device
HN7G07FU
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
Combining transistor and BRT reduces the parts count, enabling the
design of more compact equipment with a simpler system configuration.
Q1: 2SC5376F equivalent
Q2: RN1115F equivalent
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
15
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
500
mA
Base current
I
B
50
mA
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
10
V
Collector current
I
C
100
mA
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating. 130 mW per element should not be exceeded.
Unit: mm
1
.
EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 0.0068 g (typ.)
Equivalent Circuit
(top view)
Marking
7 5 A
hFE Rank
Type Name
Q1
Q2
1
2
3
4
5
6
相關(guān)PDF資料
PDF描述
HN7G08FE General-Purpose Amplifier Applications
HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
HN7G10FE Power Management Switch Applications
HN8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications
HN8050C NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN7G08FE 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:General-Purpose Amplifier Applications
HN7G08FE-A 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G08FE-A(TE85L,F 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G09FE 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N Ic=100mA Id=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G09FE(TE85L,F) 功能描述:兩極晶體管 - BJT Vceo=50V Vds=30V Ic=100mA Id=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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