參數(shù)資料
型號： HN7G06FU
廠商： Toshiba Corporation
英文描述： Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
中文描述： 電源管理開關(guān)應(yīng)用，逆變電路的應(yīng)用，驅(qū)動電路的應(yīng)用和接口電路的應(yīng)用
文件頁數(shù)： 1/6頁
文件大小： 236K
代理商： HN7G06FU
HN7G06FU
2007-11-01
1
TOSHIBA Multichip Discrete Device
HN7G06FU
Power Management Switch Applications, Inverter
Circuit Applications, Driver Circuit Applications and
Interface Circuit Applications
Combining transistor and BRT reduces the parts count, enabling the
design of more compact equipment with a simpler system configuration.
Q1: 2SA1955F equivalent
Q2: RN1104F equivalent
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
15
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
500
mA
Base current
I
B
50
mA
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
10
V
Collector current
I
C
100
mA
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating. 130 mW per element should not be exceeded.
Unit: mm
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 0.0068 g (typ.)
Equivalent
Circuit
Marking
7 4 A
hFE Rank
Type Name
6
5
4
1
2
3
Q1
Q2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN7G06FU-A(TE85L,F 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V 47K x 47Kohms RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G07FU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
HN7G08FE 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:General-Purpose Amplifier Applications
HN7G08FE-A 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G08FE-A(TE85L,F 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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