參數(shù)資料
型號(hào)： HN7G05FU
廠商： Toshiba Corporation
英文描述： Power Management Switch Applications, Inverter Circuit
中文描述： 電源管理開(kāi)關(guān)應(yīng)用，逆變電路
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 441K
代理商： HN7G05FU
HN7G05FU
2007-11-01
1
TOSHIBA Multichip Discrete Device
HN7G05FU
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
Q1 (transistor): RN2301 equivalent
Q2 (MOSFET): 2SK1830 equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
10
V
Collector current
I
C
100
mA
Q2 (MOSFET) Absolute Maximum Ratings
(Ta = 25°C)
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
(Note 1)
200
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Total rating
Marking
Equivalent Circuit
(top view)
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1E
Weight: 0.0068 g (typ.)
60
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
10
V
Drain current
I
D
50
mA
6
5
4
1
2
3
Q1
Q2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN7G05FU(TE85L,F) 功能描述:兩極晶體管 - BJT Vceo=-50V Vds=20V Ic=-100ma Id=50mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G06FE-A(TE85L,F 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G06FE-ATE85LF 制造商:Toshiba America Electronic Components 功能描述:TOSHN7G06FE-ATE85LF TRANSISTOR
HN7G06FU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
HN7G06FU-A(TE85L,F 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V 47K x 47Kohms RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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